Energy levels in embedded semiconductor nanoparticles and nanowires
KK Nanda, FE Kruis, H Fissan - Nano Letters, 2001 - ACS Publications
A finite-depth square-well model is used to show that the band gap of a nanoparticle for a
given size can be tuned by embedding the nanoparticle in different matrices. This may find a …
given size can be tuned by embedding the nanoparticle in different matrices. This may find a …
Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer
We report a combined experimental and theoretical analysis of Sb and In segregation during
the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs …
the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs …
Formation trends in quantum dot growth using metalorganic chemical vapor deposition
AA El-Emawy, S Birudavolu, PS Wong… - Journal of Applied …, 2003 - pubs.aip.org
We discuss the results of a growth matrix designed to produce high quantum dot (QD)
density, defect-free QD ensembles, which emit at 1.3 μm using metalorganic chemical vapor …
density, defect-free QD ensembles, which emit at 1.3 μm using metalorganic chemical vapor …
Capture and thermal re-emission of carriers in long-wavelength InGaAs/GaAs quantum dots
M De Giorgi, C Lingk, G Von Plessen… - Applied physics …, 2001 - pubs.aip.org
We investigate the ultrafast carrier dynamics in metalorganic chemical vapor deposition-
grown InGaAs/GaAs quantum dots emitting at 1.3 μm. Time-resolved photoluminescence …
grown InGaAs/GaAs quantum dots emitting at 1.3 μm. Time-resolved photoluminescence …
High nitrogen composition GaAsN by atmospheric pressure metalorganic vapor-phase epitaxy
J Toivonen, T Hakkarainen, M Sopanen… - Journal of Crystal …, 2000 - Elsevier
Highly luminescent GaAs1− xNx alloys were successfully grown by atmospheric pressure
metalorganic vapor-phase epitaxy (MOVPE). The nitrogen composition x of as high as 5.6 …
metalorganic vapor-phase epitaxy (MOVPE). The nitrogen composition x of as high as 5.6 …
High density patterned quantum dot arrays fabricated by electron beam lithography and wet chemical etching
VB Verma, JJ Coleman - Applied Physics Letters, 2008 - pubs.aip.org
We present a quantum dot (QD) fabrication method which allows for the definition of the
explicit location and size of an individual QD. We have obtained high optical quality, high …
explicit location and size of an individual QD. We have obtained high optical quality, high …
Correlation effects in wave function map** of molecular beam epitaxy grown quantum dots
G Maruccio, M Janson, A Schramm, C Meyer… - Nano …, 2007 - ACS Publications
We investigate correlation effects in the regime of a few electrons in uncapped InAs quantum
dots by tunneling spectroscopy and wave function (WF) map** at high tunneling currents …
dots by tunneling spectroscopy and wave function (WF) map** at high tunneling currents …
Growth and photoluminescence of InxGa1− xAs quantum dots on the surface of GaAs nanowires by metal organic chemical vapor deposition
X Yan, X Zhang, X Ren, J Li, X Lv, Q Wang… - Applied Physics …, 2012 - pubs.aip.org
In x Ga 1− x As (x= 0.6-1) quantum dots are grown on the {112} side facets of GaAs
nanowires by metal organic chemical vapor deposition. The emission spectrum of quantum …
nanowires by metal organic chemical vapor deposition. The emission spectrum of quantum …
Comparison of radiative and structural properties of 1.3 μm quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular …
A Passaseo, M De Vittorio, MT Todaro… - Applied physics …, 2003 - pubs.aip.org
We have studied the radiative and structural properties of identical In x Ga (1− x) As
quantum dot laser structures grown by metalorganic chemical vapor deposition (MOCVD) …
quantum dot laser structures grown by metalorganic chemical vapor deposition (MOCVD) …
Comparative studies on energy-dependence of reduced effective mass in quantum confined ZnS semiconductor nanocrystals prepared in polymer matrix
S Kolahi, S Farjami-Shayesteh… - Materials science in …, 2011 - Elsevier
Cubic ZnS nanocrystals have been successfully prepared by the wet chemical route at
different temperature in polyvinyl alcohol (PVA) matrix. Starting reagents were zinc acetate …
different temperature in polyvinyl alcohol (PVA) matrix. Starting reagents were zinc acetate …