The main objective of this thesis is to theoretically predict the stationary charge and spin
transport in mesoscopic semiconductor quantum devices in the presence of phonons and …

The fabrication of nanoelectronic and nanophotonic devices based on embedded quantum
structures has become feasible over the last decades, and the field is continuously …

Quantum simulations of multiple-gate nanowire Schottky-barrier (SB) MOSFETs in the
ballistic transport regime have been performed by self-consistently solving the …

A Monte Carlo investigation of charge transport—including quantum tunnelling effects—
across Schottky barriers (both n-type and p-type) in the reverse bias regime is presented …

We have carried out a thorough analysis of quantum effects in sub-10-nm silicon double-
gate field-effect transistors with ultrathin undoped channels connecting highly doped bulk …

The threshold voltage, Vth of a double-gate (DG) Schottky-barrier (SB) source/drain (S/D)
metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. An …

Ambipolar currents in germanium p-type nanowire Schottky barrier (SB) metal-oxide-
semiconductor field-effect transistors were calculated fully quantum mechanically by using …

A physics-based compact model for undoped symmetric double-gate MOSFETs with
Schottky-barrier source and drain is formulated based on the quasi-2D surface-potential …

The electrostatics of Schottky barrier (SB) source/drain (S/D) silicon nanowire transistors (SB-
NWTs) are investigated in comparison with the conventional silicon nanowire transistors …

The scaling dependence of electron transport in the double-gated Schottky barrier MOSFET
(DG-SBT) below 10 nm is investigated in the framework of quantum transport theory, using …