Silicon carbide (SiC) is recognized as a notable semiconductor because of its outstanding
characteristics, for instance wide-bandgap, outstanding magnetic properties, extraordinary …

Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique
photonic properties facilitated by the advances of nanotechnologies such as nanofabrication …

The review article describes the interplay of fundamental research and advanced processes
that have made SiC a unique semiconductor material for power electronic devices. Related …

Power electronics belongs to the future key technologies in order to increase system
efficiency as well as performance in automotive and energy saving applications. Silicon is …

Silicon carbide (SiC) as both the most important non-oxide ceramic and promising
semiconductor material grows stoichiometric SiO 2 as its native oxide. During passive …

Owing to the superior properties of the wide bandgap, high carrier mobility, high thermal
conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for …

We revisited stacking fault identification based on the characteristic photoluminescence
emission wavelengths of 4H–SiC epitaxial wafers, and we investigated 50 000 stacking …

The elucidation of the effects of structurally extended defects on electronic properties of
materials is especially important in view of the current advances in electronic device …

Despite the decades of development of the single-crystal growth and homoepitaxy of 4H
silicon carbide (4H-SiC), high-density threading dislocations (TDs) still remain in 4H-SiC. In …

Silicon carbide as a wide bandgap semiconductor is of great research interest for its
widespread deployment in a range of electronic and optoelectronic devices, particularly in …