Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …

Employing electrochemical impedance spectroscopy (EIS), we demonstrate a novel
approach towards characterizing the switching behavior of nano-ionic memristor, M/TiO 2 …

Introduction: Intrinsic resistive switching properties of Pt/TiO2-x/TiO2/Pt crossbar memory
array has been examined using the crossbar (4× 4) arrays fabricated by using DC/RF …

We investigate the resistive switching characteristics of TiO 2 films deposited by DC
magnetron sputter deposition using a metallic Ti target in different ratios of argon (Ar) …

Materials with resistance-switching properties are proving to be promising for the novel non-
volatile memories-resistive random-access memory (ReRAM). Despite extensive research …

This paper presents a correlation study between experimental results of titanium dioxide
(TiO 2)-based memristors and various hyperbolic sine function models. The current-voltage …

This work focuses on the memristive behaviour of zinc oxide-based memristive device that
was prepared by sol-gel spin coating technique to deposit ZnO. The substrate used is ITO as …

Since the emergence of memristor as the newest fundamental circuit elements, studies on
memristor modeling have been evolved. To date, the developed models were based on the …

We synthesized NixPt (1− x) nanoparticles with x ranging from 1 to 0.7. The particle size
increases with the increasing Ni content. The I–V characteristics of Au/NixPt (1− x) …

Printed electronics have led to new possibilities in the development of low-cost and
lowtemperature methods for materials production and processing. Inorganic oxide devices …