Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

JW Tomm, M Ziegler, M Hempel… - Laser & Photonics …, 2011 - Wiley Online Library
COD diagram determined for a batch of broad‐area AlGaAs diode lasers. The time to COD
within a single current pulse is plotted versus the actual average optical power in the …

Electrical and optical properties of pristine and polymerized fullerenes

TL Makarova - Semiconductors, 2001 - Springer
Electrical and optical properties of pristine and polymerized fullerenes | Semiconductors Skip to
main content SpringerLink Account Menu Find a journal Publish with us Track your research …

Temperature sensitivity of the electro-optical characteristics for mid-infrared (λ= 3–16 μm)-emitting quantum cascade lasers

D Botez, CC Chang, LJ Mawst - Journal of Physics D: Applied …, 2015 - iopscience.iop.org
The temperature dependences of the threshold current and slope efficiency, as represented
by their respective characteristic temperature coefficients T 0 and T 1, are discussed for …

High-power mid-infrared (λ∼ 3-6 μm) quantum cascade lasers

LJ Mawst, D Botez - IEEE Photonics Journal, 2021 - ieeexplore.ieee.org
The performances of mid-infrared (IR) quantum cascade lasers (QCLs) are now reaching a
maturity level that enables a variety of applications which require compact laser sources …

73% CW power conversion efficiency at 50 W from 970 nm diode laser bars

M Kanskar, T Earles, TJ Goodnough, E Stiers, D Botez… - Electronics Letters, 2005 - IET
970 nm emitting diode laser bars of broad-waveguide design have been optimised for
maximum power conversion efficiency (PCE). 73% PCE at 50 W CW output power is …

[BOOK][B] Semiconductor laser engineering, reliability and diagnostics: a practical approach to high power and single mode devices

PW Epperlein - 2013 - books.google.com
This reference book provides a fully integrated novel approach to the development of high-
power, single-transverse mode, edge-emitting diode lasers by addressing the …

Type-I diode lasers for spectral region above 3 μm

G Belenky, L Shterengas, G Kipshidze… - IEEE Journal of …, 2011 - ieeexplore.ieee.org
In this paper, we consider the role of carrier confinement in achieving high-power
continuous wave (CW) room temperature operation of GaSb-based type-I quantum-well …

Root-cause analysis of peak power saturation in pulse-pumped 1100 nm broad area single emitter diode lasers

X Wang, P Crump, H Wenzel, A Liero… - IEEE Journal of …, 2010 - ieeexplore.ieee.org
Many physical effects can potentially limit the peak achievable output power of single emitter
broad area diode lasers under high current, pulse-pumped operation conditions. Although …

Low-loss Al-free waveguides for unipolar semiconductor lasers

C Sirtori, P Kruck, S Barbieri, H Page, J Nagle… - Applied Physics …, 1999 - pubs.aip.org
A promising waveguide design for midinfrared (λ= 5–20 μ m) unipolar semiconductor lasers
is proposed and demonstrated in (Al) GaAs quantum cascade structures. In the latter, the …

20W continuous wave reliable operation of 980nm broad-area single emitter diode lasers with an aperture of 96um

P Crump, G Blume, K Paschke… - High-Power Diode …, 2009 - spiedigitallibrary.org
High power broad area diode lasers provide the optical energy for all high performance
solid state and fiber laser systems. The maximum achievable power density from such …