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All-inorganic colloidal silicon nanocrystals—surface modification by boron and phosphorus co-do**
Abstract Si nanocrystals (Si-NCs) with extremely heavily B-and P-doped shells are
developed and their structural and optical properties are studied. Unlike conventional Si …
developed and their structural and optical properties are studied. Unlike conventional Si …
Detailed review on c-Si/a-Si: H heterojunction solar cells in perspective of experimental and simulation
V Kanneboina - Microelectronic Engineering, 2022 - Elsevier
The crystalline silicon (c-Si) based photovoltaic (PV) technology is most dominated among
other PV technologies. The world record highest efficiency of 26.7% and 26.1% on n & p …
other PV technologies. The world record highest efficiency of 26.7% and 26.1% on n & p …
Infrared absorption strength and hydrogen content of hydrogenated amorphous silicon
AA Langford, ML Fleet, BP Nelson, WA Lanford… - Physical Review B, 1992 - APS
We have used infrared transmission and nuclear-reaction analysis to determine the ir
absorption strength of the Si-H wagging and stretching modes in hydrogenated amorphous …
absorption strength of the Si-H wagging and stretching modes in hydrogenated amorphous …
Vibrational spectra of hydrogen in silicon and germanium
M Cardona - Phys. Status Solidi B;(German Democratic Republic), 1983 - osti.gov
A comprehensive discussion of the vibrational spectra of hydrogen (or deuterium) in a-Si, c-
Si, and c-Si surfaces and in a-Ge is given. A simple valence force field model for the …
Si, and c-Si surfaces and in a-Ge is given. A simple valence force field model for the …
Configurational statistics in a- alloys: A quantitative bonding analysis
E Bustarret, M Bensouda, MC Habrard, JC Bruyere… - Physical Review B, 1988 - APS
The composition of hydrogenated silicon nitride films produced either by plasma-enhanced
chemical-vapor deposition (PECVD) with 0.01≤[NH 3]/[SiH 4]≤ 20 in the 220–320-C …
chemical-vapor deposition (PECVD) with 0.01≤[NH 3]/[SiH 4]≤ 20 in the 220–320-C …
Infrared spectrum and structure of hydrogenated amorphous silicon
The ir absorption spectrum of hydrogenated amorphous silicon is discussed in the context of
structural models for this material. It is shown that the integrated strength of the bond …
structural models for this material. It is shown that the integrated strength of the bond …
Properties and structure of a‐SiC:H for high‐efficiency a‐Si solar cell
Y Tawada, K Tsuge, M Kondo, H Okamoto… - Journal of Applied …, 1982 - pubs.aip.org
A series of experimental investigations on optical and optoelectronic properties of methane‐
and ethylene‐based a‐SiC: H films has been made. The chemical bonding structure of two …
and ethylene‐based a‐SiC: H films has been made. The chemical bonding structure of two …
Effects of (i)a‐Si:H deposition temperature on high‐efficiency silicon heterojunction solar cells
Excellent surface passivation induced by (i) a‐Si: H is critical to achieve high‐efficiency
silicon heterojunction (SHJ) solar cells. This is key for conventional single‐junction cell …
silicon heterojunction (SHJ) solar cells. This is key for conventional single‐junction cell …
Structural, electrical, and optical properties of a-:H and an inferred electronic band structure
KD Mackenzie, JR Eggert, DJ Leopold, YM Li, S Lin… - Physical Review B, 1985 - APS
Amorphous hydrogenated silicon-germanium alloys have been prepared over the full
composition range by rf glow discharge of silane-germane mixtures at substrate …
composition range by rf glow discharge of silane-germane mixtures at substrate …
Amorphous and microcrystalline silicon films grown at low temperatures by radio-frequency and hot-wire chemical vapor deposition
The effect of hydrogen dilution on the optical, transport, and structural properties of
amorphous and microcrystalline silicon thin films deposited by hot-wire (HW) chemical vapor …
amorphous and microcrystalline silicon thin films deposited by hot-wire (HW) chemical vapor …