Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …

In the emerging 5G and beyond 5G (B5G) era, the spotlight is sharply focused on the power
amplifier, a critical component with stringent specification requirements that dictates the …

Development of a new packaging material with superior high-temperature stability is
becoming increasingly crucial in high-power and high-density electronics industry. In this …

Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga2O3) offer
the potential to achieve higher switching performance and efficiency and lower …

Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to
improve thermal management in lateral devices; however, engineering challenges remain …

Two-dimensional bilayer structures exhibit novel properties not existing in the monolayer
ones like bilayer hexagonal boron nitride (h-BN) with exotic interfacial ferroelectrics …

-phase gallium oxide (-Ga2O3) has drawn significant attention due to its large critical electric
field strength and the availability of low-cost high-quality melt-grown substrates. Both …

This article presents a modeling approach and its implementation to study the impact of the
top-side diamond integration on the and performance of a millimeter-wave (mm-wave) N …

Wide bandgap power electronics have been commercialized for many applications. Gallium
nitride (GaN) high electron mobility transistor (HEMT) has superior performance in high …

The integration of polycrystalline diamond (PCD) has been considered as a promising
approach for overcoming the thermal management challenges in β-Gallium oxide (β-Ga 2 O …