As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …

The present article is a review of the recent progress and major trends in the field of thin-film
transistor (TFT) research involving the use of amorphous oxide semiconductors (AOS). First …

The composition of amorphous oxide semiconductors, which are well known for their optical
transparency,,,, can be tailored to enhance their absorption and induce photoconductivity for …

Amorphous oxide semiconductors (AOSs)—ternary or quaternary oxides of post‐transition
metals such as In‐Sn‐O, Zn‐Sn‐O, or In‐Ga‐Zn‐O—have been known for a decade and …

This review gives an overview of the recent progress in vacuum-based n-type transition
metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding …

In the last decades, oxide thin-film transistors (TFTs) have been extensively developed for
optoelectronic applications owing to their outstanding electrical properties, such as excellent …

This paper describes the recent advances in flexible oxide thin-film transistors (TFTs), one of
the rapidly emerging technologies for the next-generation display applications. First, the …

Oxide materials are one of the most advanced key technology in the thin film transistors
(TFTs) for the high-end of device applications. Amorphous oxide semiconductors (AOSs) …

This paper reviews the mechanisms underlying visible light detection based on
phototransistors fabricated using amorphous oxide semiconductor technology. Although this …

High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved
through low-temperature crystallization enabled via a reaction with a transition metal …