The recent rise of semiconductor nanowires opens new opportunities for realizing high
efficiency photovoltaic devices at low cost due to the unique one-dimensional structure with …

Solar cells based on silicon nanowire (SiNW) arrays are potentially cost-effective, efficient
solar-energy-harvesting devices, arising from the unique three-dimensional geometry. This …

The incorporation of impurities during the growth of nanowires from the vapour phase alters
their basic properties substantially, and this process is critical in an extended range of …

In the past decades, group IV nanowires and nanoparticles have been the subject of
extensive research. Beside tremendous progress in morphological control and integration in …

Surface faceting on sidewalls is ubiquitously observed during crystal growth of
semiconductor nanowires. However, predicting the thermal transport characteristics of …

Ge–Si core–shell nanowires with surface disorder are shown to be very promising
candidates for thermoelectric applications. In atomistic calculations we find that surface …

Ge1–x Sn x nanorods (NRs) with a nominal Sn content of 28% have been prepared by a
modified microwave-based approach at very low temperature (140° C) with Sn as growth …

Herein, we describe the growth of Si nanowires (NWs) in the vapor phase of an organic
solvent medium on various substrates (Si, glass, and stainless steel) upon which an indium …

A low-temperature chemical vapor growth of Ge nanowires using Ga as seed material is
demonstrated. The structural and chemical analysis reveals the homogeneous incorporation …

Vapor–liquid–solid nanowire growth below the bulk metal–semiconductor eutectic
temperature is known for several systems; however, the fundamental processes that govern …