Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Nickel oxide (NiO x), ap‐type oxide semiconductor, has gained significant attention due to its
versatile and tunable properties. It has become one of the critical materials in wide range of …

The physical understanding of the programming and reliability mechanisms in resistive-
switching memory devices requires a detailed characterization of the electrical and thermal …

Atomic layer deposition (ALD) provides a promising route for depositing uniform thin-film
electrodes for Li-ion batteries. In this work, bis (methylcyclopentadienyl) nickel (II)(Ni (MeCp) …

Resistive-switching memory (RRAM) is attracting a considerable interest for the
development of high-density nonvolatile memories. However, several scaling and reliability …

In this paper, we show the coexistence of the bipolar and unipolar resistive-switching modes
in NiO cells realized using an optimized oxidation process of a Ni blanket layer used as the …

Resistive random‐access memory (RRAM) stands out as a promising memory technology
due to its ease of operation, high speed, affordability, exceptional stability, and potential to …

NiO is an attractive p-type transparent semiconductor that is being explored for a variety of
applications. We report a systematic study of the electronic properties, relevant to hole …

Resistive-switching memory (RRAM) is receiving a growing deal of research interest as a
possible solution for high-density, 3D nonvolatile memory technology. One of the main …

The resistive random access memory (RRAM), based on the reversible switching between
different resistance states, is a promising candidate for next-generation nonvolatile …