Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications
Nickel oxide (NiO x), ap‐type oxide semiconductor, has gained significant attention due to its
versatile and tunable properties. It has become one of the critical materials in wide range of …
versatile and tunable properties. It has become one of the critical materials in wide range of …
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices
The physical understanding of the programming and reliability mechanisms in resistive-
switching memory devices requires a detailed characterization of the electrical and thermal …
switching memory devices requires a detailed characterization of the electrical and thermal …
Atomic layer deposition of NiO to produce active material for thin-film lithium-ion batteries
Atomic layer deposition (ALD) provides a promising route for depositing uniform thin-film
electrodes for Li-ion batteries. In this work, bis (methylcyclopentadienyl) nickel (II)(Ni (MeCp) …
electrodes for Li-ion batteries. In this work, bis (methylcyclopentadienyl) nickel (II)(Ni (MeCp) …
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
Resistive-switching memory (RRAM) is attracting a considerable interest for the
development of high-density nonvolatile memories. However, several scaling and reliability …
development of high-density nonvolatile memories. However, several scaling and reliability …
Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
In this paper, we show the coexistence of the bipolar and unipolar resistive-switching modes
in NiO cells realized using an optimized oxidation process of a Ni blanket layer used as the …
in NiO cells realized using an optimized oxidation process of a Ni blanket layer used as the …
Energy levels, electronic properties, and rectification in ultrathin p-NiO films synthesized by atomic layer deposition
NiO is an attractive p-type transparent semiconductor that is being explored for a variety of
applications. We report a systematic study of the electronic properties, relevant to hole …
applications. We report a systematic study of the electronic properties, relevant to hole …
Analysis and modeling of resistive switching statistics
The resistive random access memory (RRAM), based on the reversible switching between
different resistance states, is a promising candidate for next-generation nonvolatile …
different resistance states, is a promising candidate for next-generation nonvolatile …
Resistive random access memory with low current operation
L **ao, C Gorla, A Bandyopadhyay… - US Patent 8,520,425, 2013 - Google Patents
(60) Provisional application No. 61/467,936, filed on Mar. two bipolar resistance-switching
layers with different respec 25, 2011, provisional application No. 61/356,327, tive Switching …
layers with different respec 25, 2011, provisional application No. 61/356,327, tive Switching …
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories
Resistive-switching memory (RRAM) is receiving a growing deal of research interest as a
possible solution for high-density, 3D nonvolatile memory technology. One of the main …
possible solution for high-density, 3D nonvolatile memory technology. One of the main …