Hybrid system combining two-dimensional materials and ferroelectrics and its application in photodetection

Y Sun, G Niu, W Ren, X Meng, J Zhao, W Luo, ZG Ye… - ACS …, 2021 - ACS Publications
Photodetectors are one of the most important components for a future “Internet-of-Things”
information society. Compared to the mainstream semiconductor-based photodetectors …

Optically and electrically modulated artificial synapses based on MoS2/PZT ferroelectric field-effect transistor for neuromorphic computing system

W Chung, D Kim, J Kim, J Park, S Kim, S Lee - Journal of Materials Science …, 2025 - Elsevier
To present an advanced device scheme of high-performance optoelectronic synapses,
herein, we demonstrated the electrically-and/or optically-drivable multifaceted synaptic …

[PDF][PDF] Designing high piezoelectric properties at the BaTiO3–PbZrO3–PbTiO3 phase boundary by Landau–Devonshire theory.

Y Song, X Shi, D Li, J Wang, H Huang - Journal of Advanced …, 2024 - researching.cn
Ferroelectric materials possessing exceptional piezoelectric attributes have garnered
widespread utilization in various applications. Solid solution systems improve piezoelectric …

Charge-trap** memory device based on a heterostructure of MoS2 and CrPS4

M Shin, MJ Lee, C Yoon, S Kim, BH Park, S Lee… - Journal of the Korean …, 2021 - Springer
Atomically thin two-dimensional (2D) materials have emerged as promising candidates for
flexible and transparent electronic applications. Here, we introduce non-volatile charge …

Coupling behaviors of large lattice mismatch interfaces between hexagonal ZnO and cubic (001) MgO

H Zhou, J Wang, M Mai, X Ma, S Hu, M Xu, L Bai, S Yan - Thin Solid Films, 2020 - Elsevier
The combination of materials with large lattice mismatch due to different phase structures
plays a significant role on designing devices. Precise control of heteroepitaxial thin films is …

Reliable Nonvolatile Memory Black Phosphorus Ferroelectric Field-Effect Transistors with van der Waals Buffer

S Yan, H Huang, Z ** effect in MFIS gate stack of FeFET
B Zhang, P Hong, J Hou, Z Huo, T Ye - Journal of Applied Physics, 2023 - pubs.aip.org
The ferroelectric field effect transistor (FeFET) is a very promising candidate for low-power
and non-volatile memory. However, the co-existing effect of ferroelectric polarization and …

Blocking transition of SrTiO surface dipoles in MoS/SrTiO field effect transistors with counterclockwise hysteresis

SP Jana, S Sreesanker, S Gupta, AK Gupta - arxiv preprint arxiv …, 2024 - arxiv.org
A counterclockwise hysteresis is observed at room temperature in the transfer characteristics
of SrTiO $ _3 $(STO) gated MoS $ _2 $ field effect transistor (FET) and attributed to bistable …

[PDF][PDF] 相场模拟应变调控 PbZr (TixO3 薄膜微观畴结构和宏观铁电性能

刘迪, 王静, 王俊升, 黄厚兵 - 物理学报, 2020 - researching.cn
外延生长铁电薄膜中基底失配应变能够调控微观铁电畴结构和宏观铁电性能.
本文选择了三种相结构(四方相, 四方和菱方混合相, 菱方相) PbZr (1–x) TixO3 (x= 0.8, 0.48, 0.2) …