Methods for producing air gap-containing metal-insulator interconnect structures for VLSI
and ULSI devices using a photo-patternable low k material as well as the air gap-con taining …

Optical lithography has been an industrial workhorse for many decades. It has reached a
wavelength of 193 nm, a Numerical Aperture (NA) of 0.93 but was facing difficulties to …

This presentation starts from recounting the history of optical lithography since its> 2μm days
until the sub-100nm era. To increase resolution and keep depth of focus in check, the …

(57) ABSTRACT A method of forming a pattern in at least one device layer in or on a
substrate comprises: coating the device layer with a first photoresist layer; exposing the first …

US PATENT DOCUMENTS 4,371,605 A 2f1983 Renner 5,886,102 A 3, 1999 Sinta et al.
5,939,236 A 8, 1999 Pavelchek et al. 6,025,260 A 2/2000 Lien et al. 6,087,064 A 7/2000 Lin …

8,071,272 B2* 12/2011 Tsubaki............. 430,270.1 JP 2008-111103 A 5, 2008 8,088,557 B2*
1/2012 Tsubaki...... 430,270.1 JP 2008-122932 A 5, 2008 8,088,875 B2* 1/2012 Ootake et …

Methods for producing air gap-containing metal-insulator interconnect structures for VLSI
and ULSI devices using a photo-patternable low k material as well as the air gap-containing …

A pattern is formed by coating a resist composition comprising a polymer comprising
recurring units having an optionally acid labile group-substituted naphthol group, an acid …

BACKGROUND It is widely known that the speed of propagation of inter connect signals is
one of the most important factors control ling overall circuit speed as feature sizes are …

An interconnect structure is provided that includes at least one patterned and cured photo-
patternable low k material located on a Surface of a patterned and cured oxygen-doped SiC …