Optical devices are necessary to meet the anticipated future requirements for ultrafast and
ultrahigh bandwidth communication and computing. All optical information processing can …

We demonstrate an ultra-high-bandwidth Mach-Zehnder electro-optic modulator (EOM),
based on foundry-fabricated silicon (Si) photonics, made using conventional lithography and …

We present a thin film crystal ion sliced (CIS) LiNbO_3 phase modulator that demonstrates
an unprecedented measured electro-optic (EO) response up to 500 GHz. Shallow rib …

Integrated photonics has been pursued on a large variety of materials and platforms over
more than half a century. In recent decades, silicon has emerged as the preferred optical …

Compact electro-optical modulators are demonstrated on thin films of lithium niobate on
silicon operating up to 50 GHz. The half-wave voltage length product of the high …

Lithium niobate (LN), spurred by its success for fiber-optic communications, has remained
the material of choice for high-performance electrooptic (EO) modulators. The past decade …

Thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a
chalcogenide glass, Ge_23Sb_7S_70, to demonstrate strongly confined single-mode …

Alloys of sulfur, selenium and tellurium, often referred to as chalcogenide semiconductors,
offer a highly versatile, compositionally-controllable material platform for a variety of passive …

Second-order optical nonlinear effects (second-harmonic and sum-frequency generation)
are demonstrated in the telecommunication band by periodic poling of thin films of lithium …

Low-loss waveguides constitute an important building block for integrated photonic systems.
In this work, we investigated low-loss photonic device fabrication in Ge_23Sb_7S_70 …