With the continuous miniaturization of electronic devices and the upcoming new
technologies such as Artificial Intelligence (AI), Internet of Things (IoT), fifth-generation …

The reduction of defects and high-speed copper filling into a through-silicon-via (TSV) for the
three-dimensional stacking of Si chips were investigated. The via, with a diameter and depth …

This study reviews soft errors in modern electronic assemblies, through silicon via (TSV),
and low α-solder bum** techniques for 3-D microelectronic packaging. The TSV …

Purpose–The purpose of this paper is to overview the effect of electroplating current wave
forms on Cu filling of through‐silicon‐vias (TSV) for three‐dimensional (3D) packaging …

High-speed Cu filling into a through-silicon-via (TSV) and simplification of bum** process
by electroplating for three dimensional stacking of Si dice were investigated. The TSV was …

Through silicon via (TSV) technology is to form a via hole in a silicon chip, and to stack the
chips vertically for three-dimensional (3D) electronics packaging technology. This can …

전자기기의 소형화, 고기능화에 맞추어 반도체 소자의 집적도가 크게 증가함에 따라 기존의
평면적 칩 배열에서 3 차원으로 칩을 적층하고자 하는 연구가 활발히진행되고 있다 1). 성능 …

The electroplating of Sn-3.5 wt% Ag bumps without a photoresist (PR) mould on a Si chip
was performed to reduce the production steps and cost for 3-D chip stacking. The …

随着系统复杂度的不断提高, 传统封装技术已不能满足多芯片, 多器件的高性能互联.
而三维系统级封装(3D-system in package, 3D-SiP) 通过多层堆叠和立体互联实现了芯片和 …

With the increasing complexity of the system, the traditional packaging technology can no
longer meet the high-performance interconnection of multi-chips and multi-devices. 3D …