The importance of stress and strain effects on surface physics are reviewed. For this purpose
the following points are developed.(1) The elastic, thermodynamics and atomistic definitions …

Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

A strong diameter dependence is observed in the interfacial abruptness and growth rates in
Si/Si1− x Ge x axial heterostructure nanowires grown via Au-mediated low pressure CVD …

Since the first studies in the late 1970s most of the researches on Si1− xGex nanostructures
have been motivated by their potential applications in micro, opto and nanoelectronic …

Strain engineering is seen as a cost-effective way to improve the properties of electronic
devices. However, this technique is limited by the development of the Asarro Tiller Grinfeld …

One of the major challenges for the reliable use of self-organization phenomena for device
applications is to accurately position quantum dots on the surface. A promising way to get …

A strained epitaxial film deposited on a deformable substrate undergoes a morphological
instability, relaxing the elastic energy by surface diffusion. The nonlinear dynamical equation …

The SiGe materials has currently received a lot of interest due to its application for the
advancement of optoelectronics and related sensor technologies. Its promising stability, and …

We have used reflection high-energy electron diffraction (RHEED), atomic force microscopy
(AFM), and high-resolution electron microscopy (HREM) to investigate Sb surfactant …

By using step-bunched Si (111) surfaces as templates, we demonstrate the self-assembly of
an ordered distribution of Ge islands without lithographic patterning. Initially, islands …