The tremendous growth of data traffic has spurred a rapid evolution of optical
communications for a higher data transmission capacity. Next-generation fiber-optic …

A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …

The GeSn detector offers high-performance Si-based infrared photodetectors with
complementary metal-oxide-semiconductor (CMOS) technique compatibility. In this work, we …

The availability of high-frequency pulsed emitters in the 2–2.5 μm wavelength range paved
the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber …

High-detectivity and low-cost short-wave infrared photodetectors with complementary metal–
oxide–semiconductor (CMOS) compatibility are attractive for various applications such as …

Expanding the optical communication band is one of the most effective methods of
overcoming the nonlinear Shannon capacity limit of single fiber. In this study, GeSn …

We report the demonstration of a normal-incidence pin germanium-tin (Ge_0. 951Sn_0.
049) photodetector on silicon-on-insulator substrate for 2 μm wavelength application. The …

Integrated silicon nanophotonics has rapidly established itself as intriguing research field,
whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled …

In the era of big data, the growing demand for data transmission capacity requires the
communication band to expand from the traditional optical communication windows (∼ 1.3 …

We introduced photon-trap** microstructures into GeSn-based photodetectors for the first
time, and achieved high-efficiency photo detection at 2 µm with a responsivity of 0.11 A/W …