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Single event transients in digital CMOS—A review
The creation of soft errors due to the propagation of single event transients (SETs) is a
significant reliability challenge in modern CMOS logic. SET concerns continue to be …
significant reliability challenge in modern CMOS logic. SET concerns continue to be …
Physics of multiple-node charge collection and impacts on single-event characterization and soft error rate prediction
Physical mechanisms of single-event effects that result in multiple-node charge collection or
charge sharing are reviewed and summarized. A historical overview of observed circuit …
charge sharing are reviewed and summarized. A historical overview of observed circuit …
Single-event transient pulse quenching in advanced CMOS logic circuits
Heavy-ion broad-beam experiments on a 130 nm CMOS technology have shown
anomalously-short single-event transient pulse widths. 3-D TCAD mixed-mode modeling in …
anomalously-short single-event transient pulse widths. 3-D TCAD mixed-mode modeling in …
Soft error reliability in advanced CMOS technologies-trends and challenges
D Tang, CH He, YH Li, H Zang, C **ong… - Science China …, 2014 - Springer
With the decrease of the device size, soft error induced by various particles becomes a
serious problem for advanced CMOS technologies. In this paper, we review the evolution of …
serious problem for advanced CMOS technologies. In this paper, we review the evolution of …
Ionizing Radiation Effectsin Electronics
M Bagatin, S Gerardin - 2016 - api.taylorfrancis.com
There is an invisible enemy that constantly threatens the operation of electronics: ionizing
radiation. From sea level to outer space, ionizing radiation is virtually everywhere. At sea …
radiation. From sea level to outer space, ionizing radiation is virtually everywhere. At sea …
Fault simulation and emulation tools to augment radiation-hardness assurance testing
As of 2013, the gold standard for assessing radiation-hardness assurance (RHA) for a
system, subsystem, or a component is accelerated radiation testing and/or pulsed laser …
system, subsystem, or a component is accelerated radiation testing and/or pulsed laser …
Scaling trends in SET pulse widths in sub-100 nm bulk CMOS processes
Digital single-event transient (SET) measurements in a bulk 65-nm process are compared to
transients measured in 130-nm and 90-nm processes. The measured SET widths are …
transients measured in 130-nm and 90-nm processes. The measured SET widths are …
Single-event transient modeling in a 65-nm bulk CMOS technology based on multi-physical approach and electrical simulations
This paper presents a SET predictive methodology based on coupled MUSCA SEP3 and
electrical simulations (CADENCE tool). The method is validated by SET measurements on …
electrical simulations (CADENCE tool). The method is validated by SET measurements on …
Novel layout technique for single-event transient mitigation using dummy transistor
J Chen, S Chen, Y He, J Qin, B Liang… - … on Device and …, 2012 - ieeexplore.ieee.org
In this paper, a novel layout technique for single-event transient (SET) mitigation based on
dummy transistors is proposed. Numerical simulations using technology computer-aided …
dummy transistors is proposed. Numerical simulations using technology computer-aided …
Directional sensitivity of single event upsets in 90 nm CMOS due to charge sharing
Heavy-ion testing of a radiation-hardened-by-design (RHBD) 90 nm dual interlocked cell
(DICE latch) shows significant directional sensitivity results impacting observed cross …
(DICE latch) shows significant directional sensitivity results impacting observed cross …