Ternary quantum dots in chemical analysis. Synthesis and detection mechanisms
Ternary quantum dots (QDs) are novel nanomaterials that can be used in chemical analysis
due their unique physicochemical and spectroscopic properties. These properties are size …
due their unique physicochemical and spectroscopic properties. These properties are size …
Ordering, positioning and uniformity of quantum dot arrays
H Lan, Y Ding - Nano today, 2012 - Elsevier
Quantum dot (QD) arrays have now been attracting tremendous attention due to the
potential applications in various high performance devices (eg, QD lasers, 3rd generation …
potential applications in various high performance devices (eg, QD lasers, 3rd generation …
Advanced quantum dot configurations
We present an overview on approaches currently employed to fabricate advanced quantum
dot configurations by epitaxial growth. Widely investigated self-assembled quantum dots, ie …
dot configurations by epitaxial growth. Widely investigated self-assembled quantum dots, ie …
Three-dimensional Si/Ge quantum dot crystals
D Grützmacher, T Fromherz, C Dais, J Stangl… - Nano …, 2007 - ACS Publications
Modern nanotechnology offers routes to create new artificial materials, widening the
functionality of devices in physics, chemistry, and biology. Templated self-organization has …
functionality of devices in physics, chemistry, and biology. Templated self-organization has …
Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si (001) substrates
We identify the most important parameters for the growth of ordered SiGe islands on pit-
patterned Si (001) substrates. From a multi-dimensional parameter space we link individual …
patterned Si (001) substrates. From a multi-dimensional parameter space we link individual …
Formation and ordering of epitaxial quantum dots
Single quantum dots (QDs) have great potential as building blocks for quantum information
processing devices. However, one of the major difficulties in the fabrication of such devices …
processing devices. However, one of the major difficulties in the fabrication of such devices …
Nanofabrication of III–V semiconductors employing diblock copolymer lithography
TF Kuech, LJ Mawst - Journal of Physics D: Applied Physics, 2010 - iopscience.iop.org
To fully exploit the potential advantages of ideal quantum dots (QDs)(ie full 3D carrier
confinement), elimination of the wetting layer and a uniform monomodal QD size distribution …
confinement), elimination of the wetting layer and a uniform monomodal QD size distribution …
Independent Control Over Size and Surface Density of Droplet Epitaxial Nanostructures Using Ultra-Low Arsenic Fluxes
SV Balakirev, NE Chernenko, MM Eremenko… - Nanomaterials, 2021 - mdpi.com
Modern and future nanoelectronic and nanophotonic applications require precise control of
the size, shape and density of III-V quantum dots in order to predefine the characteristics of …
the size, shape and density of III-V quantum dots in order to predefine the characteristics of …
Focused ion beam implantation induced site-selective growth of InAs quantum dots
The site-selective growth of InAs quantum dots (QDs) by a combined focused ion beam (FIB)
and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB …
and molecular beam epitaxy (MBE) process has been demonstrated. An array of FIB …
[HTML][HTML] Techniques for epitaxial site-selective growth of quantum dots
LN McCabe, JMO Zide - Journal of Vacuum Science & Technology A, 2021 - pubs.aip.org
We present an overview of techniques used to pattern the epitaxial growth of quantum dots.
Subsequent growth, morphology, and optical characterization are also discussed. The …
Subsequent growth, morphology, and optical characterization are also discussed. The …