Yellow–red emission from (Ga, In) N heterostructures
Abstract (Ga, In) N-based light emitting devices are very efficient in producing blue light and
to a lesser extent green. Extending their spectral range to longer wavelengths while …
to a lesser extent green. Extending their spectral range to longer wavelengths while …
[HTML][HTML] What is red? On the chromaticity of orange-red InGaN/GaN based LEDs
The full width at half maximum (FWHM) of the luminescence of visible InGaN quantum well
(QW) based emitters increases with wavelength. This broadening of the luminescence …
(QW) based emitters increases with wavelength. This broadening of the luminescence …
Strain-compensated (Ga, In) N/(Al, Ga) N/GaN multiple quantum wells for improved yellow/amber light emission
Yellow/amber (570–600 nm) emitting In x Ga 1− x N/Al y Ga 1− y N/GaN multiple quantum
wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on …
wells (QWs) have been grown by metal organic chemical vapor deposition on GaN-on …
Hybrid GaN LED with capillary-bonded II–VI MQW color-converting membrane for visible light communications
JMM Santos, BE Jones, PJ Schlosser… - Semiconductor …, 2015 - iopscience.iop.org
The rapid emergence of gallium-nitride (GaN) light-emitting diodes (LEDs) for solid-state
lighting has created a timely opportunity for optical communications using visible light. One …
lighting has created a timely opportunity for optical communications using visible light. One …
[HTML][HTML] Swift heavy ion irradiation puts InGaN/GaN multi-quantum wells on the track for efficient green light emission
Abstract InN and InGaN/GaN multi-quantum wells (MQWs) were subjected to Swift Heavy
Ion (SHI) irradiation. Ion track formation was studied using transmission electron microscopy …
Ion (SHI) irradiation. Ion track formation was studied using transmission electron microscopy …
Hole transport assisted by the piezoelectric field in In0. 4Ga0. 6N/GaN quantum wells under electrical injection
S Zhang, E ** green emitting (Ga, In) N quantum wells with (Al, Ga) N: impact on structural and optical properties
The difference of growth temperatures between InGaN quantum wells and GaN barriers has
detrimental effects on the properties of the wells. Different cap** processes of InGaN …
detrimental effects on the properties of the wells. Different cap** processes of InGaN …
Optimized In composition and quantum well thickness for yellow-emitting (Ga, In) N/GaN multiple quantum wells
Abstract Yellow-emitting In x Ga 1− x N/GaN multiple quantum wells (MQWs) with different
pairs of In composition and QW thickness have been grown by metal-organic chemical …
pairs of In composition and QW thickness have been grown by metal-organic chemical …