Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been
extensively used in a range of fields including the most important one—optical …

High–speed, high–power photodiodes play a key role in wireless communication systems
for the generation of millimeter wave (MMW) and terahertz (THz) waves based on photonics …

Expanding the optical communication band is one of the most effective methods of
overcoming the nonlinear Shannon capacity limit of single fiber. In this study, GeSn …

The 2 μm wavelength band (1800–2100 nm) emerges as a promising candidate for next‐
generation optical communication. As a result, silicon photonic platforms acquire great …

Semiconductor nanomembranes (NMs) have emerged as an attractive nanomaterial for
advanced electronic and photonic devices with attractive features such as transferability and …

Mid-infrared (MIR) flexible photodetectors (FPDs) constitute an essential element for
wearable applications, including health-care monitoring and biomedical detection …

An infrared sensor with Au/SiO 2/Au metamaterial perfect absorber (MPA) structure and
Crystal ion slicing (CIS) fabricated LiTaO 3 single crystal film to realize wavelength-selective …

In this work, GeSn resonant cavity enhanced (RCE) p–i–n photodetectors (PDs) with 3.7%
Sn content in a GeSn layer were fabricated on a silicon on insulator (SOI) substrate. The …

Germanium (Ge) lateral pin photodetectors with grating and hole-array structures were
fabricated on a Ge-on-insulator (GOI) platform. Owing to the low threading dislocation …

Germanium-on-insulator (GOI) has emerged as a novel platform for Ge-based electronic and
photonic applications. Discrete photonic devices, such as waveguides, photodetectors …