US11114332B2 - Semiconductor on insulator structure comprising a plasma nitride layer and
method of manufacture thereof - Google Patents US11114332B2 - Semiconductor on insulator …

(57) ABSTRACT A surface acoustic wave (SAW) resonator device includes a semiconductor
substrate having a first surface and a second surface. The semiconductor substrate …

The present disclosure relates to enhancing the thermal performance of encapsulated flip
chip dies. According to an exemplary process, a plurality of flip chip dies are attached on a …

In this paper, the nonlinear behavior of coplanar waveguide (CPW) transmission lines
fabricated on Si and high-resistivity (HR) Si substrates is thoroughly investigated …

(57) ABSTRACT A semiconductor device and methods for manufacturing the same are
disclosed. The semiconductor device includes a polymer substrate and an interfacial layer …

A flip chip module having at least one flip chip die is disclosed. The flip chip module includes
a carrier having a top surface with a first mold compound residing on the top surface. A first …

(57) ABSTRACT A semiconductor device that does not produce nonlinearities attributed to a
high resistivity silicon handle interfaced with a dielectric region of a buried oxide (BOX) layer …

US9768056B2 - Method of manufacturing high resistivity SOI wafers with charge trap** layers
based on terminated Si deposition - Google Patents US9768056B2 - Method of manufacturing …

A single-pole double-throw novel switch device in0. 18¹m SOI complementary metal-oxide
semiconductor (CMOS) process is developed for 0.9 Ghz wireless GSMsystems. The layout …

This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the
same. In one method, a printed circuit board is provided with semiconductor die. The …