Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
This review article attempts to provide a comprehensive review of the recent progress in the
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …
so-called resistive random access memories (RRAMs). First, a brief introduction is presented …
Filamentary and interface-type memristors based on tantalum oxide for energy-efficient neuromorphic hardware
To implement artificial neural networks (ANNs) based on memristor devices, it is essential to
secure the linearity and symmetry in weight update characteristics of the memristor, and …
secure the linearity and symmetry in weight update characteristics of the memristor, and …
Forming-free and self-rectifying resistive switching of the simple Pt/TaO x/n-Si structure for access device-free high-density memory application
The search for self-rectifying resistive memories has aroused great attention due to their
potential in high-density memory applications without additional access devices. Here we …
potential in high-density memory applications without additional access devices. Here we …
Enhanced stability of filament-type resistive switching by interface engineering
The uncontrollable rupture of the filament accompanied with joule heating deteriorates the
resistive switching devices performance, especially on endurance and uniformity. To …
resistive switching devices performance, especially on endurance and uniformity. To …
Improving unipolar resistive switching uniformity with cone-shaped conducting filaments and its logic-in-memory application
S Gao, G Liu, Q Chen, W Xue, H Yang… - … applied materials & …, 2018 - ACS Publications
Resistive random access memory (RRAM) with inherent logic-in-memory capability exhibits
great potential to construct beyond von-Neumann computers. Particularly, unipolar RRAM is …
great potential to construct beyond von-Neumann computers. Particularly, unipolar RRAM is …
Forming-less and Non-Volatile Resistive Switching in WOX by Oxygen Vacancy Control at Interfaces
Resistive switching devices are recognized as candidates for next-generation memory
devices in that they can replace conventional memory devices. In these devices, a WOX film …
devices in that they can replace conventional memory devices. In these devices, a WOX film …
Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications
Surface oxidation employing neutral oxygen irradiation significantly improves the switching
and synaptic performance of ZnO-based transparent memristor devices. The endurance of …
and synaptic performance of ZnO-based transparent memristor devices. The endurance of …
Oxide memristors for ReRAM: Approaches, characteristics, and structures
AG Isaev, OO Permyakova, AE Rogozhin - Russian Microelectronics, 2023 - Springer
This review focuses on oxide memristors for resistive random access memory (ReRAM).
Possible practical implementations of ReRAM and the problem of leakage through …
Possible practical implementations of ReRAM and the problem of leakage through …
Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta 2 O …
S Gao, F Zeng, M Wang, G Wang, C Song… - Physical Chemistry …, 2015 - pubs.rsc.org
The common nonpolar switching behavior of binary oxide-based resistive random access
memory devices (RRAMs) has several drawbacks in future application, such as the …
memory devices (RRAMs) has several drawbacks in future application, such as the …
Effect of oxygen vacancy concentration on the resistive random access memory characteristics of NiOx (x = 1, 0.97, 0.94) thin films
M Kim, JY Son - Journal of Materials Science, 2024 - Springer
Polycrystalline NiO thin films with controlled oxygen vacancy concentration were deposited
on Pt/Ta/SiO2/Si substrates using RF sputtering. Auger electron spectroscopy experiments …
on Pt/Ta/SiO2/Si substrates using RF sputtering. Auger electron spectroscopy experiments …