Topological spin/polarization structures in ferroic materials continue to draw great attention
as a result of their fascinating physical behaviors and promising applications in the field of …

Ferroelectric crystals feature asymmetric or polar structures that are switchable under an
external electric field, holding promise for information storage. Nanoscale ferroelectrics …

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-
effect transistors, low-power logic, and nonvolatile memories. We devised a film with a …

Bismuth titanate (BIT) is widely known as one of the most prospective lead‐free ferroelectric
and piezoelectric materials in advanced high‐temperature sensing applications. Despite …

Transparent ferroelectric crystals with high piezoelectricity are challenging to build because
of their complex structure and disordered domains in rhombohedral relaxor ferroelectrics …

Ferroelectric tunnel junctions are promising towards high-reliability and low-power non-
volatile memories and computing devices. Yet it is challenging to maintain a high tunnelling …

Out-of-plane ferroelectricity with a high transition temperature in nanometer-scale films is
required to miniaturize electronic devices. Direct visualization of stable ferroelectric …

HfO2-based ferroelectrics have evoked considerable interest owing to the complementary
metal–oxide semiconductor compatibility and robust ferroelectricity down to a few unit cells …

Nanometer-scale 3D imaging of materials properties is critical for understanding equilibrium
states in electronic materials, as well as for optimization of device performance and …

The rapid development of the flexible electronics industry places higher demands on the
performance of flexible ferroelectric memories. In practical work, environmental factors such …