Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …
the technology for electric energy conversion. Power devices based on wide-bandgap …
Phonon thermal transport and its tunability in GaN for near-junction thermal management of electronics: A review
The heat dissipation issue has now become one of the most important bottlenecks for power
electronics due to the rapid increase in power density and working frequency. Towards the …
electronics due to the rapid increase in power density and working frequency. Towards the …
Record-low thermal boundary resistance between diamond and GaN-on-SiC for enabling radiofrequency device cooling
The implementation of 5G-and-beyond networks requires faster, high-performance, and
power-efficient semiconductor devices, which are only possible with materials that can …
power-efficient semiconductor devices, which are only possible with materials that can …
Interfacial thermal conductance across room-temperature-bonded GaN/diamond interfaces for GaN-on-diamond devices
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an
ideal material for high-power and high-frequency electronics applications, such as wireless …
ideal material for high-power and high-frequency electronics applications, such as wireless …
Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics
β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor
(EG∼ 4.8 eV), which promises generational improvements in the performance and …
(EG∼ 4.8 eV), which promises generational improvements in the performance and …
Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices
L Sang - Functional Diamond, 2022 - Taylor & Francis
With the increasing power density and reduced size of the GaN-based electronic power
converters, the heat dissipation in the devices becomes the key issue toward the real …
converters, the heat dissipation in the devices becomes the key issue toward the real …
Fabrication of GaN/diamond heterointerface and interfacial chemical bonding state for highly efficient device design
J Liang, A Kobayashi, Y Shimizu, Y Ohno… - Advanced …, 2021 - Wiley Online Library
The direct integration of gallium nitride (GaN) and diamond holds much promise for high‐
power devices. However, it is a big challenge to grow GaN on diamond due to the large …
power devices. However, it is a big challenge to grow GaN on diamond due to the large …
A critical review of thermal boundary conductance across wide and ultrawide bandgap semiconductor interfaces
The emergence of wide and ultrawide bandgap semiconductors has revolutionized the
advancement of next-generation power, radio frequency, and opto-electronics, paving the …
advancement of next-generation power, radio frequency, and opto-electronics, paving the …
Device-level thermal management of gallium oxide field-effect transistors
The ultrawide bandgap (UWBG)(~ 4.8 eV) and melt-grown substrate availability of β-Ga 2 O
3 give promise to the development of next-generation power electronic devices with …
3 give promise to the development of next-generation power electronic devices with …
Low thermal boundary resistance interfaces for GaN-on-diamond devices
The development of GaN-on-diamond devices holds much promise for the creation of high-
power density electronics. Inherent to the growth of these devices, a dielectric layer is placed …
power density electronics. Inherent to the growth of these devices, a dielectric layer is placed …