Point defects affect or even completely determine physical and chemical properties of
semiconductors. Characterization of point defects based on experimental techniques alone …

REVIEW The role of defects as essential entities in semiconductor materials is reviewed.
Early experiments with semiconductors were hampered by the extreme sensitivity of the …

Praise for the First Edition" The book goes beyond the usual textbook in that it provides more
specific examples of real-world defect physics... an easy reading, broad introductory …

Omnipresent impurities such as carbon, oxygen, silicon, and hydrogen play important roles,
both detrimental and beneficial, in the fabrication of solid-state devices. The electronic and …

Introduction: metastable defects; 2. III-V compounds: DX2 and EL2 centers; 3. Other
crystalline materials; 4. Hydrogenated amorphous silicon: properties of defects; 5 …

This is an introductory survey of the vibrational spectroscopy of defects in semiconductors
that contain light-mass elements. The capabilities of vibrational spectroscopy for the …

An outline of infrared localized vibrational mode absorption spectroscopy relevant to silicon
impurities in GaAs is presented. Absorption lines from Si Ga donors, Si As acceptors, Si Ga …

It is now widely accepted that DX levels in n-type Al x Ga 1-x As are ground states of isolated
substitutional donors in distorted configurations which are stabilized by trap** two …

A high-resolution Laplace-transform deep-level-transient spectroscopy has been used to
study electon emission from the DX centers related to group-IV (silicon) and group-VI …

The structural and electronic properties of Si, Ge, Sn, S, Se, and Te substitutional donors in
GaAs are examined via self-consistent pseudopotential calculations. Two distinct negatively …