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[HTML][HTML] Enhanced electrical properties of copper nitride films deposited via high power impulse magnetron sputtering
High Power Impulse Magnetron Sputtering (HiPIMS) has generated a great deal of interest
by offering significant advantages such as high target ionization rate, high plasma density …
by offering significant advantages such as high target ionization rate, high plasma density …
Thermal stability and optical properties of Sc-doped copper nitride films
A Yu, Y Ma, A Chen, Y Li, Y Zhou, Z Wang, J Zhang… - Vacuum, 2017 - Elsevier
Sc-doped copper nitride (Cu 3 N) films were prepared by reactive magnetron sputtering
equipment at room temperature with a preferred orientation of (111). XRD and XPS figures …
equipment at room temperature with a preferred orientation of (111). XRD and XPS figures …
Copper nitride films with high p-type conductivity fabricated by incorporating middle-frequency pulse into high power impulse magnetron sputtering
We report on the high deposition rate and conductivity of superimposed HiPIMS (HiPIMS+
MF) p-type Cu 3 N films, including five sputtering modes: conventional DCMS, pure HiPIMS …
MF) p-type Cu 3 N films, including five sputtering modes: conventional DCMS, pure HiPIMS …
Low-cost preparation and characterization of new CuO/ZnO and Cu3N/ZnO nanocomposites
R Szczęsny, P Sędzicki, M Trzcinski… - Journal of Crystal …, 2025 - Elsevier
Abstract CuO/ZnO and Cu 3 N/ZnO nanocomposites were prepared in a three-step synthesis
consisting of the co-precipitation of Cu 2+ and Zn 2+ hydroxide carbonates (Cu/Zn-Carb) …
consisting of the co-precipitation of Cu 2+ and Zn 2+ hydroxide carbonates (Cu/Zn-Carb) …
Evaluating Sulfur as a P‐Type Dopant in Cu3N Using Ab Initio Methods
Copper nitride (Cu3N) is an environmentally friendly semiconducting material with bipolar
do** capability and is of interest to various applications. As deposited Cu3N films have …
do** capability and is of interest to various applications. As deposited Cu3N films have …
Band gap evolution of bulk Cu3N and monolayer Cu2N under nonhydrostatic strain
MJ Winiarski - Journal of Solid State Chemistry, 2018 - Elsevier
Structural and electronic properties of bulk Cu 3 N and monolayer Cu 2 N under ab-plane
strain have been evaluated from first principles. Furthermore, the electronic structure of a …
strain have been evaluated from first principles. Furthermore, the electronic structure of a …
[PDF][PDF] LATTICE EXPANSION AND GRAIN BOUNDARY EXCESS VOLUME OF NANOCRYSTALLINE Se PREPARED BY MECHANICAL MILLING.
Lattice constant is one of the most principle crystal parameters, which critically determines
physical, chemical, mechanical and thermodynamic, and other properties. Conversely …
physical, chemical, mechanical and thermodynamic, and other properties. Conversely …
Growth and optoelectronic properties of Cu3NPdx thin films by solution deposition
HY Tong, HL Zhang, ZZ Hui, XW Tang, RH Wei… - Journal of Alloys and …, 2020 - Elsevier
Cu 3 NPd x thin films have been successfully prepared on glass substrates by a facile
chemical solution deposition. Phase composition and surface morphology are evaluated by …
chemical solution deposition. Phase composition and surface morphology are evaluated by …