[BOOK][B] Ultrafast spectroscopy of semiconductors and semiconductor nanostructures
J Shah - 2013 - books.google.com
The field of ultrafast spectroscopy of semiconductors and their nanostruc tures continues to
be an active field of research. Exciting new developments have taken place since the first …
be an active field of research. Exciting new developments have taken place since the first …
Advances in multi-dimensional coherent spectroscopy of semiconductor nanostructures
Multi-dimensional coherent spectroscopy (MDCS) has become an extremely versatile and
sensitive technique for elucidating the structure, composition, and dynamics of condensed …
sensitive technique for elucidating the structure, composition, and dynamics of condensed …
Tunnelling and relaxation in semiconductor double quantum wells
R Ferreira, G Bastard - Reports on Progress in Physics, 1997 - iopscience.iop.org
Double quantum wells are among the simplest semiconductor heterostructures exhibiting
tunnel coupling. The existence of a quantum confinement effect for the energy levels of a …
tunnel coupling. The existence of a quantum confinement effect for the energy levels of a …
Quantum well carrier sweep out: relation to electroabsorption and exciton saturation
The authors studied the effects of changing the barrier design of GaAs-Al/sub x/Ga/sub 1-
x/As quantum wells on the electroabsorption, exciton saturation, and carrier sweep-out …
x/As quantum wells on the electroabsorption, exciton saturation, and carrier sweep-out …
[BOOK][B] Exciton Polaritons in Microcavities: New Frontiers
D Sanvitto, V Timofeev - 2012 - books.google.com
In the past decade, there has been a burst of new and fascinating physics associated to the
unique properties of two-dimensional exciton polaritons, their recent demonstration of …
unique properties of two-dimensional exciton polaritons, their recent demonstration of …
Field-dependent carrier decay dynamics in strained quantum wells
We have studied the effects of an external electric field on photoluminescence spectra and
carrier lifetimes in strained In x Ga 1− x N/G a N quantum wells embedded in p− i− n light …
carrier lifetimes in strained In x Ga 1− x N/G a N quantum wells embedded in p− i− n light …
Coherent excitonic coupling in an asymmetric double InGaAs quantum well arises from many-body effects
We study an asymmetric double InGaAs quantum well using optical two-dimensional
coherent spectroscopy. The collection of zero-quantum, one-quantum, and two-quantum two …
coherent spectroscopy. The collection of zero-quantum, one-quantum, and two-quantum two …
Perovskite-based artificial multiple quantum wells
Semiconductor quantum well structures have been critical to the development of modern
photonics and solid-state optoelectronics. Quantum level tunable structures have introduced …
photonics and solid-state optoelectronics. Quantum level tunable structures have introduced …
Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence …
W Hahn, JM Lentali, P Polovodov, N Young… - Physical Review B, 2018 - APS
We present direct experimental evidence of Anderson localization induced by the intrinsic
alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the …
alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the …
Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells
We have measured both spectrum-and time-resolved photoluminescence (PL) of
InGaN/GaN light-emitting diode structure as a function of an external bias. From spectrum …
InGaN/GaN light-emitting diode structure as a function of an external bias. From spectrum …