Semiconductor spin qubits

G Burkard, TD Ladd, A Pan, JM Nichol, JR Petta - Reviews of Modern Physics, 2023 - APS
The spin degree of freedom of an electron or a nucleus is one of the most basic properties of
nature and functions as an excellent qubit, as it provides a natural two-level system that is …

Precision tomography of a three-qubit donor quantum processor in silicon

MT Mądzik, S Asaad, A Youssry, B Joecker… - Nature, 2022 - nature.com
Nuclear spins were among the first physical platforms to be considered for quantum
information processing,, because of their exceptional quantum coherence and atomic-scale …

Atomic-precision advanced manufacturing for Si quantum computing

E Bussmann, RE Butera, JHG Owen, JN Randall… - MRS Bulletin, 2021 - Springer
A materials synthesis method that we call atomic-precision advanced manufacturing
(APAM), which is the only known route to tailor silicon nanoelectronics with full 3D atomic …

Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots

X Wang, E Khatami, F Fei, J Wyrick… - Nature …, 2022 - nature.com
The Hubbard model is an essential tool for understanding many-body physics in condensed
matter systems. Artificial lattices of dopants in silicon are a promising method for the analog …

Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy

LF Peña, JC Koepke, JH Dycus, A Mounce… - npj Quantum …, 2024 - nature.com
SiGe heteroepitaxial growth yields pristine host material for quantum dot qubits, but residual
interface disorder can lead to qubit-to-qubit variability that might pose an obstacle to reliable …

Practical strategies for enhancing the valley splitting in Si/SiGe quantum wells

MP Losert, MA Eriksson, R Joynt, R Rahman… - Physical Review B, 2023 - APS
Silicon/silicon-germanium heterostructures have many important advantages for hosting
spin qubits. However, controlling the valley splitting (the energy splitting between the two …

A silicon metal-oxide-semiconductor electron spin-orbit qubit

RM Jock, NT Jacobson, P Harvey-Collard… - Nature …, 2018 - nature.com
The silicon metal-oxide-semiconductor (MOS) material system is a technologically important
implementation of spin-based quantum information processing. However, the MOS interface …

Coherent control of a donor-molecule electron spin qubit in silicon

L Fricke, SJ Hile, L Kranz, Y Chung, Y He… - Nature …, 2021 - nature.com
Donor spins in silicon provide a promising material platform for large scale quantum
computing. Excellent electron spin coherence times of T 2*= 268 μ s with fidelities of 99.9 …

Two-electron spin correlations in precision placed donors in silicon

MA Broome, SK Gorman, MG House, SJ Hile… - Nature …, 2018 - nature.com
Substitutional donor atoms in silicon are promising qubits for quantum computation with
extremely long relaxation and dephasing times demonstrated. One of the critical challenges …

Coherent coupling between a quantum dot and a donor in silicon

P Harvey-Collard, NT Jacobson, M Rudolph… - Nature …, 2017 - nature.com
Individual donors in silicon chips are used as quantum bits with extremely low error rates.
However, physical realizations have been limited to one donor because their atomic size …