Monolithic three-dimensional integration of RRAM-based hybrid memory architecture for one-shot learning

Y Li, J Tang, B Gao, J Yao, A Fan, B Yan… - Nature …, 2023 - nature.com
In this work, we report the monolithic three-dimensional integration (M3D) of hybrid memory
architecture based on resistive random-access memory (RRAM), named M3D-LIME. The …

Achieving software-equivalent accuracy for hyperdimensional computing with ferroelectric-based in-memory computing

A Kazemi, F Müller, MM Sharifi, H Errahmouni… - Scientific reports, 2022 - nature.com
Hyperdimensional computing (HDC) is a brain-inspired computational framework that relies
on long hypervectors (HVs) for learning. In HDC, computational operations consist of simple …

A reconfigurable fefet content addressable memory for multi-state hamming distance

L Liu, AF Laguna, R Rajaei, MM Sharifi… - … on Circuits and …, 2023 - ieeexplore.ieee.org
Pattern searches, a key operation in many data analytic applications, often deal with data
represented by multiple states per dimension. However, hash tables, a common software …

Monolithic 3D integration as a pathway to energy-efficient computing and beyond: From materials and devices to architectures and chips

Y Fan, R An, J Tang, Y Li, T Liu, B Gao, H Qian… - Current Opinion in Solid …, 2024 - Elsevier
As emerging technologies like artificial intelligence (AI) and big data continue to evolve, the
demand for high-performance computing (HPC) has been increasing, driving the …

A multi-bit CAM design with ultra-high density and energy efficiency based on FeFET NAND

C **, J Xu, J Zhao, J Gu, J Chen, H Liu… - IEEE Electron …, 2023 - ieeexplore.ieee.org
We have proposed and experimentally demonstrated a novel multi-bit content addressable
memory (CAM) cell based on two series connected ferroelectric FETs (FeFETs). Thanks to …

A novel small-signal ferroelectric capacitance-based content addressable memory for area-and energy-efficient lifelong learning

W Xu, Z Fu, K Wang, C Su, J Luo… - IEEE Electron …, 2023 - ieeexplore.ieee.org
In this work, for the first time, a novel energy-and area-efficient ferroelectric (FE) small-signal
capacitance based content addressable memory (CAM) design is proposed and …

Associative memory based experience replay for deep reinforcement learning

M Li, A Kazemi, AF Laguna, XS Hu - Proceedings of the 41st IEEE/ACM …, 2022 - dl.acm.org
Experience replay is an essential component in deep reinforcement learning (DRL), which
stores the experiences and generates experiences for the agent to learn in real time …

In-memory search with phase change device-based ternary content addressable memory

L Yang, R Zhao, Y Li, H Tong, Y Yu… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
Here, we proposed an in-memory search prototype based on phase change memory (PCM).
First, using the PCM, a highly compact (8F 2) and low-energy (0.3 fJ/bit/search) nonvolatile …

Reconfigurable SWCNT ferroelectric field-effect transistor arrays

D Rhee, KH Kim, J Zheng, S Song, LM Peng… - arxiv preprint arxiv …, 2024 - arxiv.org
Reconfigurable devices have garnered significant attention for alleviating the scaling
requirements of conventional CMOS technology, as they require fewer components to …

Logic and memory ferroelectric field-effect-transistor using reversible and irreversible domain wall polarization

SH Kuk, S Han, DH Lee, BH Kim, J Shim… - IEEE Electron …, 2022 - ieeexplore.ieee.org
We propose a higher-non-hysteric ferroelectric field-effect transistor (FEFET) using
reversible domain wall displacement. By separately stimulating reversible and irreversible …