Cathodoluminescence (CL) is a powerful tool for the investigation of optical properties of
materials. In recent years, its combination with scanning transmission electron microscopy …

The full InGaN structure is used to achieve red light emitting diodes (LEDs). This LED
structure is composed of a partly relaxed InGaN pseudo-substrate fabricated by Soitec …

The impact of a relaxed InGaN pseudosubstrate on indium incorporation in a full InGaN
heterostructure was investigated. Three types of InGaN pseudosubstrates were tested with …

The InGaN pseudo-substrate, namely InGaNOS (InGaN On Sapphire), is used to enhance
the In incorporation rate in In y Ga 1-y N/In x Ga 1-x N multiple quantum wells (MQWs) to get …

We demonstrate high, up to 30% In content InGaN sub-micrometer platelets on GaN by
metalorganic vapor phase epitaxy. These InGaN platelets were selectively grown on flat …

Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum
wells in high efficiency light emitting diodes. We observe a variation in the emission …

Laser-assisted atom probe tomography (APT) and high-resolution dark-field electron
holography (HR-DFEH) were performed to investigate the composition of a polar [0001] …

Semipolar (11 2¯ 2) InGaN/GaN superlattice templates with different periodical InGaN layer
thicknesses were grown on m-plane sapphire substrates using metal-organic chemical …

In 0.17 Ga 0.83 N-based metal-semiconductor-metal photo-diodes (MSM-PDs) with
recessed anode electrodes were fabricated and characterized. The photodiodes exhibited …

The indium (In) incorporation induced morphological evolution and strain relaxation of high
In content InGaN epilayers grown by metal–organic chemical vapor deposition (MOCVD) …