Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered
promising candidates for power devices due to their superior advantages of high current …
promising candidates for power devices due to their superior advantages of high current …
On the channel hot-electron's interaction with C-doped GaN buffer and resultant gate degradation in AlGaN/GaN HEMTs
In this work, we report a critical semi-ON-state drain stress voltage above which the gate
current increases significantly and degrades permanently in AlGaN/GaN high electron …
current increases significantly and degrades permanently in AlGaN/GaN high electron …
Physical insights into electron trap** mechanism in the carbon-doped GaN buffer in AlGaN/GaN HEMTs and its impact on dynamic on-resistance
In this work, a well-calibrated computational framework is used to probe the physical
mechanisms leading to electron trap** in the carbon-doped GaN buffer in AlGaN/GaN …
mechanisms leading to electron trap** in the carbon-doped GaN buffer in AlGaN/GaN …
Effect of acceptor traps in GaN buffer layer on breakdown performance of AlGaN/GaN HEMTs
M Ma, Y Cao, H Lv, Z Wang, X Zhang, C Chen, L Wu… - Micromachines, 2022 - mdpi.com
In this paper, Silvaco TCAD software is used to simulate the buffer traps in AlGaN/GaN high
electron mobility transistors (HEMTs), and its effects on the breakdown performance and key …
electron mobility transistors (HEMTs), and its effects on the breakdown performance and key …
Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic RON of AlGaN/GaN HEMTs Under Semi-on State
In this work, we report a unique dependence of dynamic RON on gate-stack of AlGaN/GaN
high electron mobility transistors (HEMTs) on carbon (C)-doped GaN buffer under semi-on …
high electron mobility transistors (HEMTs) on carbon (C)-doped GaN buffer under semi-on …
Interplay of device design and carbon-doped GaN buffer parameters in determining dynamic in AlGaN/GaN HEMTs
Using a well-calibrated computational framework, we reveal a complex interplay between
the device design and the epi-stack parameters, which determines the electron trap** in …
the device design and the epi-stack parameters, which determines the electron trap** in …
Temperature-Dependent ESD Breakdown in AlGaN/GaN HEMTs With Carbon-Doped Buffer
This work investigates the temperature-dependent electrostatic discharge (ESD) behavior of
AlGaN/GaN HEMTs using a transmission line pulsing system, which becomes relevant …
AlGaN/GaN HEMTs using a transmission line pulsing system, which becomes relevant …
Novel surface passivation scheme by using p-type AlTiO to mitigate dynamic ON resistance behavior in AlGaN/GaN HEMTs—Part II
The underlying mechanism responsible for the unique dynamic ON-resistance behavior is
unified by demonstrating the presence of critical drain stress voltage, above which dynamic …
unified by demonstrating the presence of critical drain stress voltage, above which dynamic …
Physical Insights Into the Lattice Temperature Dependent Evolution of Hot Electron Distribution in GaN HEMTs on C-Doped GaN-on-Si
In this work, with the help of detailed experimentation and well-calibrated computations, we
probe into the physical mechanism governing temperature dependence of the hot electron …
probe into the physical mechanism governing temperature dependence of the hot electron …
Impact of Channel Electric Field Profile Evolution on Nanosecond Timescale Cyclic Stress-Induced Dynamic RON Behavior in AlGaN/GaN HEMTs—Part II
In this work, we reveal a correlation between the evolution of the channel electric field profile
and dynamic ON resistance (${\Delta}{R} _ {{\mathrm {ON}}} $) behavior of AlGaN/GaN …
and dynamic ON resistance (${\Delta}{R} _ {{\mathrm {ON}}} $) behavior of AlGaN/GaN …