Accurate modeling of electrothermal effects of GaN electronic devices is critical for reliability
design and assessment. In this paper, an electrothermal model for large signal equivalent …

An empirical large-signal III–V field-effect transistor (FET) model has been developed. Three
improved drain-source current (I–V) modeling equations capable of representing arbitrarily …

This paper presents a large-signal empirical model for GaN HEMT devices using an
improved Angelov drain current formulation with self-heating effect and a modified non …

Abstract Taylor Series coefficients (TSCs) are one of the main factors behind the device's
nonlinearity. Multi-bias behaviour of TSCs for GaN HEMT has been extracted using two-tone …

In this paper, the bias‐dependent current–voltage (I–V) characteristics and their high‐order
derivatives of GaAs pseudomorphic high electron mobility transistors (pHEMTs) have been …

In this paper, we present an improved drain-source current (IV) model for HEMT's which is
simple and easy to extract, suitable for implementation in simulation tools. A single modeling …

This article presents an improved nonlinear IDS (VGS, VDS) model useful for modeling the
experimental pulsed I‐V measurement data of GaN FETs operated at large drain‐source …

We present an improved large-signal device model of GaAs/GaN HEMTs, amenable for use
in commercial nonlinear simulators. The proposed model includes a new exponential …

The last seven years, Cinvestav-GDL and CICESE, two of the most important research
centers in Mexico, have been working together in several microwave research topics. This …

GaN HEMTs are currently known as one of the most important technology for microwave
high power amplifiers (HPAs). In the perspective of efficiency design of high performance …