The field of terahertz integrated technology has undergone significant development in the
past ten years. This has included work on different substrate technologies such as III–V …

The evolution of wireless communication points to increasing demands on throughput for
data-intensive applications in modern society. Integrated millimeter-wave systems with …

This invited paper reviews the progress of silicon–germanium (SiGe) bipolar-complementary
metal–oxide–semiconductor (BiCMOS) technology-based integrated circuits (ICs) during the …

This paper gives an overall picture from BiCMOS technologies up to THz systems
integration, which were developed in the European Research project TARANTO. The …

This paper reviews the advantages of SiGe BiCMOS technologies and their applications in
the millimeterwave to terahertz domains. The state-of-the-art covering both the Si/SiGe HBTs …

The ability to sense terahertz waves in a chip-scale technology operable at room
temperature has potential for transformative applications in chemical sensing, biomedical …

Bipolar junction transistor (BJT) as one important circuit element is now widely used in high‐
speed computation and communication for its capability of high‐power signal amplification …

This paper reviews the state of emerging transistor technologies capable of terahertz
amplification, as well as the state of transistor modeling as required in terahertz electronic …

A new integration concept for terahertz (THz) systems is presented in this article, wherein
patterned silicon-oninsulator wafers form all DC, IF, and RF networks in a homogeneous …

This paper reviews recent developments in process technology of high-speed SiGe HBTs at
IHP. Two device concepts, one with selective epitaxial growth and one with non-selective …