[HTML][HTML] High contrast 3D imaging of surfaces near the wavelength limit using tabletop EUV ptychography
Scanning electron microscopy and atomic force microscopy are well-established techniques
for imaging surfaces with nanometer resolution. Here we demonstrate a complementary and …
for imaging surfaces with nanometer resolution. Here we demonstrate a complementary and …
RESCAN: an actinic lensless microscope for defect inspection of EUV reticles
Actinic mask defect inspection is an essential process step for the implementation of extreme
ultraviolet (EUV) lithography in high-volume manufacturing. The main challenges for any …
ultraviolet (EUV) lithography in high-volume manufacturing. The main challenges for any …
Comparative study of extreme ultraviolet absorber materials using lensless actinic imaging
Background: One of the challenges for extreme ultraviolet (EUV) lithography is the mitigation
of mask three-dimensional effects arising from the oblique incident angle and the mask …
of mask three-dimensional effects arising from the oblique incident angle and the mask …
Actinic, spot-scanning microscope for EUV mask inspection and metrology
KC Johnson - US Patent 10,025,079, 2018 - Google Patents
An actinic, through-pellicle EUV mask inspection or metrology system acquires image
information by scanning an array of focused illumination spots across a photomask and …
information by scanning an array of focused illumination spots across a photomask and …
Method and assembly for characterizing a mask or a wafer for microlithography
M Carl, M Voelcker - US Patent 11,269,260, 2022 - Google Patents
A method includes using an illumination device to illumi nate an object with electromagnetic
radiation produced by a radiation source, and using a detector device to capture a …
radiation produced by a radiation source, and using a detector device to capture a …
[BOOK][B] Interferometric light microscopy for wafer defect inspection and three-dimensional object reconstruction
R Zhou - 2014 - search.proquest.com
The first topic of the dissertation is semiconductor wafer defect inspection. We developed a
highly sensitive defect inspection system based on laser interferometric microcopy, called …
highly sensitive defect inspection system based on laser interferometric microcopy, called …
Method for detecting a structure of a lithography mask and device for carrying out the method
U Matejka, T Scheruebl, M Koch, C Husemann… - US Patent …, 2021 - Google Patents
In detecting the structure of a lithography mask, a portion of the lithography mask is firstly
illuminated with illumination light of an at least partially coherent light source in the at least …
illuminated with illumination light of an at least partially coherent light source in the at least …