A film bulk acoustic resonator based on ferroelectric aluminum scandium nitride films
This work reports on the first demonstration of the frequency tuning and intrinsic polarization
switching of film bulk acoustic resonators (FBARs), based on sputtered AlScN piezoelectric …
switching of film bulk acoustic resonators (FBARs), based on sputtered AlScN piezoelectric …
[HTML][HTML] High-fidelity patterning of AlN and ScAlN thin films with wet chemical etching
We report on the anisotropic wet etching of sputtered AlN and Sc 0.2 Al 0.8 N thin films. With
tetramethyl ammonium hydroxide at 80° C, the etch rates along the c-axis were 330 and 30 …
tetramethyl ammonium hydroxide at 80° C, the etch rates along the c-axis were 330 and 30 …
Vertical and Lateral Etch Survey of Ferroelectric AlN/Al1−xScxN in Aqueous KOH Solutions
Z Tang, G Esteves, J Zheng, RH Olsson III - Micromachines, 2022 - mdpi.com
Due to their favorable electromechanical properties, such as high sound velocity, low
dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and …
dielectric permittivity and high electromechanical coupling, Aluminum Nitride (AlN) and …
Deposition of highly crystalline AlScN thin films using synchronized high-power impulse magnetron sputtering: From combinatorial screening to piezoelectric devices
J Patidar, K Thorwarth, T Schmitz-Kempen… - Physical Review …, 2024 - APS
With the integration of 5G in day-to-day devices and the foreseeable 6G revolution, demand
for advanced radio frequency (RF) microelectromechanical systems (MEMS) is growing …
for advanced radio frequency (RF) microelectromechanical systems (MEMS) is growing …
[HTML][HTML] Deposition and characterisation of c-axis oriented AlScN thin films via microwave plasma-assisted reactive HiPIMS
In this work, we demonstrate that highly oriented c-axis aluminium scandium nitride (AlScN)
piezoelectric thin films can be deposited via microwave plasma-assisted reactive high power …
piezoelectric thin films can be deposited via microwave plasma-assisted reactive high power …
Characterization of AlScN-based multilayer systems for piezoelectric micromachined ultrasound transducer (pMUT) fabrication
K Bespalova, E Österlund, G Ross… - Journal of …, 2021 - ieeexplore.ieee.org
Scandium-alloyed aluminum nitride (AlScN) is a potential material for micro-
electromechanical systems because of its unique advantages, such as strong piezoelectric …
electromechanical systems because of its unique advantages, such as strong piezoelectric …
Impact of negative bias on the piezoelectric properties through the incidence of abnormal oriented grains in Al0. 62Sc0. 38N thin films
CS Sandu, F Parsapour, D **ao, R Nigon, LM Riemer… - Thin Solid Films, 2020 - Elsevier
Sputter deposited AlScN films with an Sc content of 38 at.% were investigated by X-ray
diffraction and electron microscopy to study the influence of the radio frequency (RF) bias on …
diffraction and electron microscopy to study the influence of the radio frequency (RF) bias on …
A piezoelectric micromachined ultrasonic transducer using thin-film lithium niobate
This letter presents the first piezoelectric micromachined ultrasonic transducer (PMUT)
based on thin-film lithium niobate (LiNbO 3). The figures of merit (FoMs) of LiNbO 3 as …
based on thin-film lithium niobate (LiNbO 3). The figures of merit (FoMs) of LiNbO 3 as …
High-pressure output 40 kHz air-coupled piezoelectric micromachined ultrasonic transducers
This paper presents air-coupled piezoelectric micromachined ultrasonic transducers
(PMUTs) fabricated from single-crystal PZT, enabling very high sound pressure level (SPL) …
(PMUTs) fabricated from single-crystal PZT, enabling very high sound pressure level (SPL) …
Study of AlScN thin film deposition on large size silicon wafer
T Zhao, K Guo - Thin Solid Films, 2024 - Elsevier
Abstract This work prepared Al 0.8 Sc 0. 2N thin films (AlScN) with a thickness of 1 μm on Φ=
200 mm (100) bare silicon wafers and studied the effects of sputtering power, substrate bias …
200 mm (100) bare silicon wafers and studied the effects of sputtering power, substrate bias …