Wide band gap (WBG) semiconductors require packaging with reduced parasitic inductance
and capacitance. To achieve this, new packaging solutions are proposed that increase …

Capacitance–voltage (C–V) gate characteristics of power metal-oxide-semiconductor field-
effect transistors (mosfets) play an important role in the dynamic device performance. C–V …

This paper presents a multi-stage gate driver based on a switched gate resistor topology for
paralleled silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors …

Broadband electromagnetic (EM) modeling increases in importance for virtual prototy** of
advanced power electronics systems (PES), enabling a more accurate prediction of fast …

In recent years, using SiC devices for fast switching have led to the miniaturization of power
modules. However, due to the high di/dt of fast switching, false triggering and parallel …

In this paper, an intelligent gate driver for parallel-connected silicon carbide (SiC) metal-
oxide-semiconductor field-effect transistors (MOSFETs) is presented. Commercial gate …

A key characteristic of today's switched mode power converters is their conducted
electromagnetic emission (EME). To apply mitigation techniques with minimal weight …

In this work, a gate driver is presented that allows to balance the temperature of parallel-
connected silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors …

Inter-terminal capacitances (ITCs) have major influence on the dynamic performance of
power SiC MOSFETs. Knowledge of the exact values for the ITCs is required in order to …

Finite element analysis (FEA) is a commonly used technique to estimate the parasitics of
semiconductor packaging structures such as multi-chip power modules (MCPMs). The shift …