Molecular imprinting technology (MIT) aims to prepare polymers with tailor-made binding
sites for the templates in shape, size and functional groups. However, many disadvantages …

Addressed herein is a facile method for the preparation of magnetic graphene oxide–Fe 3 O
4 (GO–Fe 3 O 4) nanocomposites and the rectifying properties of (GO–Fe 3 O 4)/p-Si …

In this study, the GaAs-based metal-semiconductor (MS) contact was prepared as a
reference sample for comparison with other devices in the literature, especially some …

The admittance measurements which are including capacitance/conductance–voltage–
frequency (C–V–f and G/ω–V–f) measurements of the Al/PTCDA/p-Si (MPS) type Schottky …

Pieces of information about the physical and electronic properties of diamond-like carbon
(DLC) interfacial-layered Schottky devices are crucial because DLC is known for its …

The semi-logarithmic forward bias IV plots of the Au/(0.07 Zn-PVA)/n-4H-SiC (MPS) type
SBDs showed double exponential behavior therefore these plots revealed two distinct linear …

In order to determine the effective current-conduction mechanisms in Au/TiO 2/n-4H-SiC
(metal-insulator semiconductor) type Schottky barrier diodes (SBDs), their current-voltage …

In this study, current conduction mechanisms of the sample (Au/Ti)/Al 2 O 3/n-GaAs were
investigated in detail using current–voltage (I–V) measurements in the temperature range of …

The frequency and voltage dependence of the capacitance–voltage (C–V) and conductance–
voltage (G/ω–V) characteristics of the Al/(% 7 Zn-doped PVA)/p-Si (MPS) structure were …

Abstract The Au/ZnO/n-GaAs Schottky barrier diode was fabricated and examined regarding
to its current–voltage characteristics under distinct illumination intensities at room …