III-nitride semiconductor lasers grown on Si
M Feng, J Liu, Q Sun, H Yang - Progress in Quantum Electronics, 2021 - Elsevier
III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …
Chip-scale GaN integration
Abstract Blue LEDs and HEMTs based on III-Nitride have been flourishing commercially
across the globe, thanks largely to breakthroughs in the material quality of the wide …
across the globe, thanks largely to breakthroughs in the material quality of the wide …
Active matrix monolithic micro‐LED full‐color micro‐display
An active matrix monolithic micro‐LED full‐color micro‐display with a pixel density of 317
ppi is demonstrated. Starting from large‐scale and low‐cost GaN‐on‐Si epilayers …
ppi is demonstrated. Starting from large‐scale and low‐cost GaN‐on‐Si epilayers …
Active matrix monolithic LED micro-display using GaN-on-Si epilayers
An active matrix light emitting diode (LED) microdisplay system was demonstrated with GaN-
on-Si epilayers and a custom-designed CMOS backplane using an Au-free Cu/Snbased …
on-Si epilayers and a custom-designed CMOS backplane using an Au-free Cu/Snbased …
A review on GaN-based two-terminal devices grown on Si substrates
Gallium nitride (GaN) based two-terminal devices, such as Schottky barrier diodes (SBDs),
pin diodes and light-emitting diodes (LEDs) are essential components for power conversion …
pin diodes and light-emitting diodes (LEDs) are essential components for power conversion …
Wafer-scale crack-free 10 µm-thick GaN with a dislocation density of 5.8× 107 cm− 2 grown on Si
J Liu, Y Huang, X Sun, X Zhan, Q Sun… - Journal of Physics D …, 2019 - iopscience.iop.org
The increasing demand for complementary metal-oxide-semiconductor integrated GaN-
based optoelectronics and power electronics calls for wafer-scale crack-free and high …
based optoelectronics and power electronics calls for wafer-scale crack-free and high …
Fabrication of phosphor-free III-nitride nanowire light-emitting diodes on metal substrates for flexible photonics
In this paper, we report our study on high-performance III-nitride nanowire light-emitting
diodes (LEDs) on copper (Cu) substrates via the substrate-transfer process. Nanowire LED …
diodes (LEDs) on copper (Cu) substrates via the substrate-transfer process. Nanowire LED …
Enhanced performance of vertical-structured InGaN micro-pixelated light-emitting-diode array fabricated using an ion implantation process
In this Letter, a new approach to fabricating a high-efficiency vertical-structured InGaN micro-
pixelated light-emitting diode (μVLED) is presented. The high-resistivity selective areas are …
pixelated light-emitting diode (μVLED) is presented. The high-resistivity selective areas are …
Light‐Induced Thin‐Film Transfer Processes Based on Phase Transition of GeSbTe and ITO Sacrificial Layers
In the upcoming ubiquitous era, wearable/flexible electronics are spotlighted to get various
types of numerous information in real time. Several researchers have investigated flexible …
types of numerous information in real time. Several researchers have investigated flexible …
A Fully-Integrated Micro-Display System With Hybrid Voltage Regulator
A fully-integrated active matrix light-emitting diode (AMLED) micro-display system is
demonstrated in this paper. The system consists of a AMLED array chip based on GaN-on …
demonstrated in this paper. The system consists of a AMLED array chip based on GaN-on …