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III-nitride semiconductor lasers grown on Si
M Feng, J Liu, Q Sun, H Yang - Progress in Quantum Electronics, 2021 - Elsevier
III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …
Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode
We investigate the effects of V-pits on the optical properties of a state-of-the-art, highly
efficient, blue InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) with a high …
efficient, blue InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) with a high …
Photoinduced entropy of InGaN/GaN pin double-heterostructure nanowires
The photoinduced entropy of InGaN/GaN pin nanowires was investigated using temperature-
dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in …
dependent (6–290 K) photoluminescence. We also analyzed the photocarrier dynamics in …
Carrier localization in the vicinity of dislocations in InGaN
We present a multi-microscopy study of dislocations in InGaN, whereby the same threading
dislocation was observed under several microscopes (atomic force microscopy, scanning …
dislocation was observed under several microscopes (atomic force microscopy, scanning …
Band alignment and -type do** of
Composed of earth-abundant elements, ZnSnN 2 is a promising semiconductor for
photovoltaic and photoelectrochemical applications. However, basic properties such as the …
photovoltaic and photoelectrochemical applications. However, basic properties such as the …
InGaN/GaN blue light emitting diodes using freestanding GaN extracted from a Si substrate
M Lee, M Yang, KM Song, S Park - ACS Photonics, 2018 - ACS Publications
We demonstrate the first InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN
grown using a Si substrate. Transmission electron microscopy and X-ray diffraction analysis …
grown using a Si substrate. Transmission electron microscopy and X-ray diffraction analysis …
Atomic diffusion of indium through threading dislocations in InGaN quantum wells
Y Yamaguchi, Y Kanitani, Y Kudo, J Uzuhashi… - Nano Letters, 2022 - ACS Publications
The compositional and structural investigations of threading dislocations (TDs) in
InGaN/GaN multiple quantum wells were carried out using correlative transmission electron …
InGaN/GaN multiple quantum wells were carried out using correlative transmission electron …
Dislocations in AlGaN: Core structure, atom segregation, and optical properties
We conducted a comprehensive investigation of dislocations in Al0. 46Ga0. 54N. Using
aberration-corrected scanning transmission electron microscopy and energy dispersive X …
aberration-corrected scanning transmission electron microscopy and energy dispersive X …
Dopant Segregation Inside and Outside Dislocation Cores in Perovskite BaSnO3 and Reconstruction of the Local Atomic and Electronic Structures
Distinct dopant behaviors inside and outside dislocation cores are identified by atomic-
resolution electron microscopy in perovskite BaSnO3 with considerable consequences on …
resolution electron microscopy in perovskite BaSnO3 with considerable consequences on …
The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers
J Smalc-Koziorοwska, J Moneta, P Chatzopoulou… - Scientific reports, 2020 - nature.com
III-nitride compound semiconductors are breakthrough materials regarding device
applications. However, their heterostructures suffer from very high threading dislocation (TD) …
applications. However, their heterostructures suffer from very high threading dislocation (TD) …