Assessing the figures of merit of graphene-based radio frequency electronics: a review of GFET in RF technology

N Norhakim, HF Hawari, ZA Burhanudin - IEEE Access, 2022 - ieeexplore.ieee.org
Graphene has been extensively investigated in the context of electronic components due to
its attractive properties, such as high carrier mobility and saturation velocity. In the past …

Exploiting Ambipolarity in Graphene Field‐Effect Transistors for Novel Designs on High‐Frequency Analog Electronics

F Pasadas, A Medina‐Rull, FG Ruiz, JN Ramos‐Silva… - Small, 2023 - Wiley Online Library
Exploiting ambipolar electrical conductivity based on graphene field‐effect transistors has
raised enormous interest for high‐frequency (HF) analog electronics. Controlling the device …

Waste factor and waste figure: A unified theory for modeling and analyzing wasted power in radio access networks for improved sustainability

TS Rappaport, M Ying, N Piovesan… - arxiv preprint arxiv …, 2024 - arxiv.org
This paper introduces Waste Factor (W), also denoted as Waste Figure (WF) in dB, a
promising new metric for quantifying energy efficiency in a wide range of circuits and …

First-principles study of the structural, electronic and optical properties of two-dimensional PC6X and PX6 (X= N, As)

YD Wu, Z Mu, RB Luo, XJ Ma, ZT Liu, M Zhong, QJ Liu - Vacuum, 2022 - Elsevier
Based on the recently-found bulked graphene-like PC 6 monolayer with a direct band gap of
0.83 eV and an extremely high intrinsic conductivity, we have designed four novel two …

Integrated 10-GHz graphene FET amplifier

A Hamed, M Asad, MD Wei, A Vorobiev… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
Graphene has unique electrical and mechanical properties which can pave the way for new
types of devices for microwave applications. However, emerging technologies often have …

Performance Analysis of Open-Gate Junction FET: A New Foundry-based Silicon Transistor for Biochemical Sensing Applications

A Panahi, E Ghafar-Zadeh - IEEE Access, 2024 - ieeexplore.ieee.org
This paper investigates the performance and parametric design of a new foundry-based
silicon field-effect transistor (FET) sensing platform known as the open-gate junction field …

Amplitude-phase variation in a graphene-based microstrip line

M Yasir, S Fatikow, OC Haenssler - Micromachines, 2022 - mdpi.com
A graphene-based transmission line with independent amplitude and phase variation
capability is proposed. Variation of graphene's tunable conductivity by an applied DC bias is …

Designing and Reliability analysis of radiation hardened Stacked gate Junctionless FinFET and CMOS Inverter

HD Sehgal, Y Pratap, S Kabra - IEEE Transactions on Device …, 2023 - ieeexplore.ieee.org
Along with radiation sensing, necessity to study and design reliable radiation hardened
devices is also increasing now-a-days. These devices are tolerant to high dosage of …

Electronic viscous boundary layer in gated graphene

P Cosme, JS Santos, H Terças - Physica Scripta, 2022 - iopscience.iop.org
We investigate the boundary layer problem in viscous electronic flows in gated graphene.
Recent experiments on graphene hydrodynamics indicate the emergence of non-Poiseuille …

[HTML][HTML] A Ka-Band Integrated Six-Port Chip for Analog Complex Correlator

W He, X Chen, J Gong, A Hu, J Miao - Sensors, 2022 - mdpi.com
Six-port technology has been widely used in microwave systems, such as interferometric
passive imaging. In this paper, an integrated Ka-band (32–36 GHz) six-port chip based on …