Instabilities in semiconductor heterostructure growth can be exploited for the self-organized
formation of nanostructures, allowing for carrier confinement in all three spatial dimensions …

The spin of a carrier trapped in a self-assembled quantum dot has the potential to be a
robust optically active qubit that is compatible with existing III–V semiconductor device …

This book reviews recent advances in the exciting and rapid growing field of semiconductor
quantum dots by contributions from some of the most prominent researchers in the field …

Nanoscale science and technology is a young and burgeoning field that encompasses
nearly every discipline of science and engineering. With rapid advances in areas such as …

The strain fields in and around self-organized In (Ga) As∕ Ga As quantum dots (QDs)
sensitively depend on QD geometry, average InGaAs composition, and the In∕ Ga …

Self-assembled quantum dots are often modeled by continuum models (effective mass or k∙
p) that assume the symmetry of the dot to be that of its overall geometric shape. Lens …

We present an overview on approaches currently employed to fabricate advanced quantum
dot configurations by epitaxial growth. Widely investigated self-assembled quantum dots, ie …

Self-assembled semiconductor quantum dots (QDs) exhibit fully quantized electronic states
and high radiative efficiencies. This makes them highly suitable both for fundamental …

A microscopic picture for the GaAs overgrowth of self-organized InAs/GaAs (001) quantum
dots is developed. Scanning tunneling microscopy measurements reveal two cap** …

Non-volatile memories based on the flash architecture with self-assembled III–V quantum
dots (SAQDs) used as a floating gate are one of the prospective directions for universal …