Interband cascade lasers

I Vurgaftman, R Weih, M Kamp, JR Meyer… - Journal of Physics D …, 2015 - iopscience.iop.org
We review the current status of interband cascade lasers (ICLs) emitting in the midwave
infrared (IR). The ICL may be considered the hybrid of a conventional diode laser that …

Advances in VCSELs for communication and sensing

A Larsson - IEEE Journal of selected topics in quantum …, 2011 - ieeexplore.ieee.org
The vertical-cavity surface-emitting laser (VCSEL) has become a light source of great
importance for industrial and consumer applications. This includes communication and …

Mid-infrared semiconductor lasers: a review

E Tournie, AN Baranov - Semiconductors and Semimetals, 2012 - Elsevier
The mid-infrared (MIR) wavelength range of the electromagnetic spectrum offers a number
of applications of growing importance such as photonic sensors for environment, industry or …

[HTML][HTML] Room-temperature mid-infrared interband cascade vertical-cavity surface-emitting lasers

WW Bewley, CL Canedy, CS Kim, CD Merritt… - Applied physics …, 2016 - pubs.aip.org
We report interband cascade vertical-cavity surface-emitting lasers (ICVCSELs) that operate
in pulsed mode at temperatures up to 70 C. Their emission at λ≈ 3.4 μm extends …

Temperature stable mid-infrared GaInAsSb/GaSb vertical cavity surface emitting lasers (VCSELs)

AB Ikyo, IP Marko, K Hild, AR Adams, S Arafin… - Scientific Reports, 2016 - nature.com
GaInAsSb/GaSb based quantum well vertical cavity surface emitting lasers (VCSELs)
operating in mid-infrared spectral range between 2 and 3 micrometres are of great …

Novel InP-and GaSb-based light sources for the near to far infrared

S Stephan, D Frederic… - … Science and Technology, 2016 - iopscience.iop.org
This topical review presents an overview on novel concepts for light emitting diodes (LEDs)
and lasers for the near infrared to the THz regime. GaSb-based quantum well lasers are …

Type-II InP-based lasers emitting at 2.55 μm

S Sprengel, A Andrejew, K Vizbaras, T Gruendl… - Applied Physics …, 2012 - pubs.aip.org
Room-temperature lasing at 2.55 μm is reported for InP-based GaInAs/GaAsSb type-II
quantum well lasers in pulsed mode up to 42 C. This record long-wavelength lasing has …

Transverse-mode characteristics of GaSb-based VCSELs with buried-tunnel junctions

S Arafin, A Bachmann… - IEEE Journal of Selected …, 2011 - ieeexplore.ieee.org
We report the transverse-mode characteristics of GaSb-based vertical-cavity surface-
emitting lasers (VCSELs) with buried-tunnel junctions (BTJs). The optical-index guiding in …

Single-mode monolithic GaSb vertical-cavity surface-emitting laser

D Sanchez, L Cerutti, E Tournié - Optics express, 2012 - opg.optica.org
We report on the fabrication and performances of an electrically-pumped GaSb monolithic
VCSEL, ie, a VCSEL with two epitaxial Bragg mirrors. Selective lateral etching of a tunnel …

Ultra-low resistive GaSb/InAs tunnel junctions

K Vizbaras, M Törpe, S Arafin… - … Science and Technology, 2011 - iopscience.iop.org
Abstract The GaSb and InAs (Sb) material combination results in a type-III (broken gap)
band alignment and is of particular interest for use as an ohmic, low-resistive intra-cavity …