Semiconductor‐based photocatalysis as a productive technology furnishes a prospective
solution to environmental and renewable energy issues, but its efficiency greatly relies on …

HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …

Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …

Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …

Resistive switching effect in transition metal oxide (TMO) based material is often associated
with the valence change mechanism (VCM). Typical modeling of valence change resistive …

Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

As the size of materials, particles, and devices shrinks to nanometer, atomic, or even
quantum scale, it is more challenging to characterize their thermal properties reliably …

About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films,
there is tremendous interest in this material and ferroelectric oxides are once again in the …

Interest in resistance switching is currently growing apace. The promise of novel high‐
density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but …

Graphene and related materials (GRMs) are promising candidates for the fabrication of
resistive random access memories (RRAMs). Here, this emerging field is analyzed …