In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …

Beta phase-gallium oxide (β-Ga 2 O 3) is an emerging ultrawide bandgap semiconductor
but lacks efficient p-type do**, which hinders development of high-performance bipolar …

III-V compound semiconductor-based light emitting devices (LEDs) operating in ultraviolet to
visible wavelength ranges are greatly important for their applications, including displays …

Beta-phase gallium oxide (β-Ga 2 O 3) has exceptional electronic properties with vast
potential in power and radio frequency electronics. Despite the excellent demonstrations of …

As an attractive next generation ultrawide bandgap material, Ga 2 O 3 has been
demonstrated to be capable of high voltage operation. However, the lack of shallow p-type …

Diamond is a highly attractive ultrawide bandgap semiconductor for next-generation high-
power switching devices and RF devices for its superior physical and electrical properties …

Ultrathin oxides (UOs) and ultrathin nitrides (UNs) play a crucial role in forming lattice-
mismatched semiconductor heterostructures that are fabricated by using semiconducting …

We report the fabrication and characteristics of native oxides-interfaced heterovalent
GaAs/Ge np heterojunction diodes. The native oxides (GaAs) xOy and GexOy were …

The short-wave infrared (SWIR) wavelength, especially 1.55 μm, has attracted significant
attention in various areas such as high-speed optical communication and LiDAR systems …

Germanium-tin (GeSn) is a promising semiconductor material for future optoelectronic
devices operating at the near-infrared to mid-infrared spectral range. In this work, we report …