[HTML][HTML] Wide band gap devices and their application in power electronics

A Kumar, M Moradpour, M Losito, WT Franke… - Energies, 2022 - mdpi.com
Power electronic systems have a great impact on modern society. Their applications target a
more sustainable future by minimizing the negative impacts of industrialization on the …

Next generation electric drives for HEV/EV propulsion systems: Technology, trends and challenges

I López, E Ibarra, A Matallana, J Andreu… - … and Sustainable Energy …, 2019 - Elsevier
In recent decades, several factors such as environmental protection, fossil fuel scarcity,
climate change and pollution have driven the research and development of a more clean …

A review of silicon carbide CMOS technology for harsh environments

H Wang, P Lai, MZ Islam, ASMK Hasan… - Materials Science in …, 2024 - Elsevier
A comprehensive overview of the advancements, challenges, and prospects of silicon
carbide (SiC) complementary metal-oxide-semiconductor (CMOS) technology is presented …

Cascode GaN/SiC: A wide-bandgap heterogenous power device for high-frequency applications

J Xu, L Gu, Z Ye, S Kargarrazi… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Wireless power transfer systems and plasma generators are among the increasing number
of applications that use high-frequency power converters. Increasing switching frequency …

Review of high-temperature power electronics converters

Y **ao, Z Zhang, MS Duraij… - … on Power Electronics, 2022 - ieeexplore.ieee.org
Power electronics converters operating at elevated temperature usually have degraded
performance, such as reduced efficiency, lower noise immunity, and decreased system …

Pressureless sintering of nanosilver paste as die attachment on substrates with ENIG finish for semiconductor applications

X Wang, Y Mei, X Li, M Wang, Z Cui, GQ Lu - Journal of Alloys and …, 2019 - Elsevier
In order to overcome interfacial delamination of pressureless sintered nanosilver as die
attachment on the ENIG finish, we tried to clarify the densification and interfacial diffusion …

An integrated SiC CMOS gate driver for power module integration

M Barlow, S Ahmed, AM Francis… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
With high-temperature power devices available, the support circuitry required for efficient
operation, such as a gate driver, is needed as part of a complete high-temperature solution …

Stable operation of AlGaN/GaN HEMTs for 25 h at 400° C in air

S Kargarrazi, AS Yalamarthy… - IEEE Journal of the …, 2019 - ieeexplore.ieee.org
Extreme environments such as the Venus atmosphere are among the emerging applications
that demand electronics that can withstand high-temperature oxidizing conditions. While …

Sintering dynamic evolution and enhancement mechanism of nano-Cu/boron nitride composite matrix with excellent mechanical properties from the atomic …

W Lv, J Lv, J Liu, C Chen, Y Kang - Composite Structures, 2025 - Elsevier
Boron nitride (BN) nanomaterials are widely employed to enhance the physical properties of
materials and are well-known in the design of composite structures. In this paper, molecular …

Microstructural evolution and performance of high-tin-content Cu40Sn60 (wt.%) core/shell powder TLPS bonding joints

X Peng, Y Wang, Z Ye, J Huang, J Yang, S Chen… - Journal of manufacturing …, 2022 - Elsevier
This paper investigated the microstructure evolution and performance of high tin content
Cu@ Sn core/shell (60 wt% Sn) powder transient liquid phase sintering bonding. The …