Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

InN is still the least studied material among III‐nitrides and there are several problems to be
overcome for better understanding of its material properties and also its material control for …

We present a comprehensive study of vacancy and vacancy-impurity complexes in InN
combining positron annihilation spectroscopy and ab initio calculations. Positron densities …

The origin of bulk electrons in In-face InN has been studied by considering the effects of both
unintentionally incorporated impurities and threading dislocation densities on electron …

The role of point defects related to the presence of excess nitrogen is elucidated for InN thin
films grown by different techniques. Elastic recoil detection analysis has shown the presence …

Abstract Ternary In x Ga 1− x N alloys became technologically attractive when p-do** was
achieved to produce blue and green light emitting diodes (LED) s. Starting in the mid …

The synthesis of a perfect InN monolayer is important to achieve desirable properties for the
further investigation and application of InN monolayers. However, the inevitably existing …

We investigate the structural and electronic properties and formation energies of vacancy,
interstitial, and antisite defects, as well as complex formation, in wurtzite InN using first …

We report the molecular beam epitaxy growth of device quality InN films on GaN epilayer
and nano-wall network (NWN) templates deposited on c-sapphire by varying the film …

We have applied a slow positron beam to study InN samples grown by metal-organic vapor-
phase epitaxy with different V/III molar ratios (3300–24 000) and at different growth …