All-electrical driven magnetization switching attracts much attention in next-generation
spintronic memory and logic devices, particularly in magnetic random-access memory …

While early magnetic memory designs relied on magnetization switching by locally
generated magnetic fields, key insights in condensed matter physics later suggested the …

In this work, IrMn-based perpendicular magnetic tunnel junctions (MTJs) are investigated. By
inserting a thin W layer at an antiferromagnet/ferromagnet (AFM/FM) interface, we enhance …

Field-free magnetization switching via the interplay of spin orbit torque (SOT), exchange bias
field (⁠ HEX⁠), and voltage controlled magnetic anisotropy (VCMA) is crucial for the …

The ability to efficiently manipulate magnetization is of great significance for practical
applications of spin–orbit torque (SOT) devices. In this study, we report the voltage …

Field-free magnetization switching is critical towards practical, integrated spin-orbit torque
(SOT)-driven magnetic random-access memory with perpendicular magnetic anisotropy. Our …

Reliability and packing density concerns are the two major shortcomings of spin transfer
torque and spin orbit torque based magnetic memory, respectively. Voltage controlled …

Binary neural networks (BNNs) are promising for resource-constrained Internet of Things
(IoT) devices owing to the lightweight memory and computation requirements. Moreover …

The interplay of spin-orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA)
has great potential to be the next-generation writing method for low-power, fast-speed, and …

Enhancing the performance of magnetic random access memories (MRAMs) is crucial,
considering speed, energy efficiency, and endurance. Spin-orbit torque-based MRAMs offer …