Diffusion on the nano/atomic scales in multilayers, thin films has many challenging features
even if the role of structural defects (grain-boundaries, dislocations, etc.) can be neglected …

We demonstrate, using computer simulations based on deterministic kinetic equations and
Monte Carlo technique, that during intermixing in an ideal AB system with an initially wide …

The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on
Si 29/Si nat heterostructures using neutron reflectometry and secondary ion mass …

years,[12] yet the degradation processes that occur over time, particularly under thermal
stress, are not well understood.[13, 14] That is, the efficiency of a device will degrade over …

The Si–Ge interdiffusivity in SiGe alloys grown epitaxially on Si (100) substrates was
systematically measured for Ge concentrations between 0.075 and 0.192 over a …

It is shown that the well-known blueshift of the fundamental absorption edge in as-deposited
compositionally modulated amorphous Si/Ge and As 6 Se 94/Se 80 Te 20 multilayers (with …

With the aim of providing fundamental cross-section data for deuteron induced gamma ray
emission analysis, and eliminate the application of standards from routine analytical work …

Recent experimental results on self-diffusion (SD) in amorphous silicon (a-Si)[Kirschbaum et
al., Phys. Rev. Lett. 120, 225902 (2018)] indicate that the atomic mechanism of this process …

Over the last years, several experimental and theoretical studies of diffusion kinetics on the
nanoscale have shown that the time evolution (x∝ tkc) differs from the classical Fickian law …

This work studies the possibility to treat plasma enhanced chemical vapor deposited
(PECVD) silicon germanium (Si1− xGex) thin films grown at 400° C or lower with a pulsed …