A thermal model of a semiconductor structure is developed using a hierarchical function
space, rather than physical space. The thermal model is derived using the proper orthogonal …

We propose a design for a semiconductor structure emitting broadband light in the infrared,
based on InAs quantum dots (QDs) embedded into a metamorphic step-graded In x Ga 1− x …

Computer simulation of microscopic transport and light emission in semiconductor
nanostructures is often restricted to an isolated system of a single quantum well, wire or dot …

Auger induced leakage is shown to be a contributing factor for the internal quantum
efficiency (IQE) droop in III‐nitride quantum‐well light emitting diodes (LEDs). The …

We have studied the temperature dependence of electroluminescence in superluminescent
light emitting diode InGaN structures emitting light at 405 nm. Devices were fabricated in the …

US8539408B1 - Method for thermal simulation - Google Patents US8539408B1 - Method for
thermal simulation - Google Patents Method for thermal simulation Download PDF Info …

We present a self-consistent electric and optic model for superluminescent light-emitting
diodes (SLED) using 3D finite-element method. The carrier transport is calculated by the drift …

A broadband superluminescent light emitting diode with In 0.2 Ga 0.8 N/GaN multiple
quantum wells (MQWs) active region is investigated. The investigation is based on a …

In this article, the effects of carrier escape, capture, and diffusion rates, and also carrier
leakage term on the spectral and power characteristics of In 0.2 Ga 0.8 N/GaN multiple …

The availability of analytical models and numerical simulation tools is inevitable for the
development and optimization of broadband high-power superluminescent light-emitting …